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Image sensor and method for manufacturing same

An image sensor and junction technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve problems such as free movement of photocharges, generation of dark current, reduction of saturation and sensitivity, etc.

Inactive Publication Date: 2009-03-11
DONGBU HITEK CO LTD
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  • Claims
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Problems solved by technology

[0006] Meanwhile, according to the prior art, since the source and drain of the transfer transistor of the readout circuit are heavily doped with N-type impurities, a charge sharing phenomenon occurs
When the charge sharing phenomenon occurs, the sensitivity of the output image is reduced and image errors can be generated
[0007] In addition, according to the prior art, since the photocharge cannot move freely between the photodiode and the readout circuit, dark current is generated, or the saturation and sensitivity are reduced

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  • Image sensor and method for manufacturing same
  • Image sensor and method for manufacturing same
  • Image sensor and method for manufacturing same

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Embodiment Construction

[0017] Hereinafter, embodiments of the image sensor will be described in detail with reference to the accompanying drawings.

[0018] In the description of the embodiments, when it is mentioned that a layer (or film) is "on" another layer or substrate, it can be understood that the layer (or film) is directly on another layer or substrate, or where Intermediate layers can occur. Further, when it is mentioned that a layer is "under" another layer, it can be understood that the layer may be directly under the other layer, or one or more intervening layers may be interposed therebetween. In addition, when a layer is referred to as being "between" two layers, it can also be understood that only that layer is between the two layers, or one or more intervening layers may also be present.

[0019] The present disclosure is not limited to complementary metal-oxide-semiconductor (CMOS) image sensors, but can be applied to any image sensor that requires a photodiode.

[0020] figure ...

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Abstract

Provided are an image sensor and a manufacturing method thereof. The image sensor can include a readout circuitry on a first substrate, an electrical junction region in the first substrate electrically connected with the readout circuitry, and an interconnection on the first substrate. The interconnection can be formed for connection to the electrical junction region. An image sensing device can be formed on the interconnection. The image sensor can inhibit the occurrence of the charge share phenomenon, enhance the filling coefficient, minimize the dark current, and inhibit the decrease of the saturation and sensitivity by providing a fast moving channel for photo-charges between a photodiode and the readout circuit.

Description

technical field [0001] The invention relates to an image sensor and a manufacturing method thereof. Background technique [0002] Image sensors are semiconductor devices used to convert optical images into electrical signals. The image sensor may be roughly classified into a Charge Coupled Device (CCD) image sensor or a Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS). [0003] In the prior art, photodiodes are formed by ion implantation in a substrate with transistor circuits. In order to increase the number of pixels without increasing the chip size, the size of the diode needs to be continuously reduced. As the size of photodiodes continues to decrease, the area of ​​the light receiving portion also decreases, resulting in a decrease in image quality. [0004] Furthermore, since the stack height cannot be reduced as much as the area of ​​the light receiving portion, the number of photons incident to the light receiving portion is also reduced due to di...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/82
CPCH01L27/14607H01L27/14612H01L27/14636
Inventor 黄俊
Owner DONGBU HITEK CO LTD
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