Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Exposure apparatus and method for photolithography process

A technology of lithography process and exposure device, which is applied in the direction of photolithography process exposure device, microlithography exposure equipment, optics, etc., can solve the problems of general products and methods, such as lack of suitable structure and method, inconvenience, etc.

Inactive Publication Date: 2013-01-02
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It can be seen that the above-mentioned existing exposure device and method obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Exposure apparatus and method for photolithography process
  • Exposure apparatus and method for photolithography process
  • Exposure apparatus and method for photolithography process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, below in conjunction with the accompanying drawings and preferred embodiments, the specific implementation, structure, The method, steps, features and effects thereof are described in detail below.

[0040] The present invention generally relates to a lithography process, and more particularly to an exposure process and system for facilitating semiconductor device fabrication. However, it should be understood that the specific embodiments are presented as examples to teach the broader inventive concepts, and those skilled in the art can easily apply the teachings disclosed in the present invention to other methods or apparatuses. For example: Although described herein as applicable to lithography systems and methods for fabricating semiconductor devices on substrates such as wafers, the present disclosure is disclosed as applicable to ot...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is an exposure apparatus including a variable focusing device. The variable focusing device may include a transparent membrane that may be deformed in the presence of an electric field. The deformation of the transparent membrane may allow the focus length of a radiation beam to be modified. In an embodiment, the variable focusing device may be modulated such that a radiation beam having a first focus length is provided for a first position on an exposure target and a radiation beam having a second focus length is provided for a second position on the exposure target. A method and computer-readable medium are also provided.

Description

technical field [0001] The present invention relates to a lithographic process, in particular to an exposure device and method for the lithographic process applied to the manufacture of semiconductor elements. Background technique [0002] A scanner, known as a step-and-scan system, is an exposure tool used in today's lithography process (or photolithography process) to manufacture semiconductor devices. When exposing the photosensitive material on the substrate, the scanner is used to move the relative position of the substrate (eg, wafer) and the mask (often called photomask). Common scanners, like other common exposure tools, are limited to the execution of an exposure process (a process is a process, referred to herein as a process) in a predetermined exposure field with a fixed focal length. The exposure field includes the area of ​​the substrate, and this area is covered by a single exposure or "shot" (eg, exposure). In contrast, today's semiconductor components ofte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70641G03F7/70858G03F7/70833G03F7/70258
Inventor 游大庆王宪程谢弘璋
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com