Piezoresistive micro-cantilever beam sensor based on suture stress concentration and manufacture method

A technology of micro-cantilever beam and stress concentration, which is applied in the direction of biological testing, material inspection products, etc., to achieve large bending stress and improve sensitivity

Inactive Publication Date: 2009-04-29
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the piezoresistive micro-cantilever sensor, a cantilever made of a material with a smaller Young's modulus (the middle silicon dioxide layer of the SOI silicon wafer has a smaller Young's modulus than single crystal silicon, etc.) under the same

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  • Piezoresistive micro-cantilever beam sensor based on suture stress concentration and manufacture method
  • Piezoresistive micro-cantilever beam sensor based on suture stress concentration and manufacture method
  • Piezoresistive micro-cantilever beam sensor based on suture stress concentration and manufacture method

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Embodiment Construction

[0033] The present invention will be described in further detail below in conjunction with the accompanying drawings and examples, but is not limited to the examples.

[0034] The invention belongs to micro-electromechanical system piezoresistive micro-cantilever sensor. The sensing unit includes a Wheatstone bridge composed of a detection cantilever beam 1, a reference cantilever beam 2 and four identical piezoresistive sensitive resistors R1, R2, R3, and R4. Such as figure 1, it is detected that three equidistant rectangular holes 4 are etched on the cantilever beam 1 as the stress concentration area, and there is no hole structure on the cantilever beam 2 for reference. As shown in Fig. 2(a), the two piezoresistive elements R1 and R3 integrated on the surface of the cantilever are respectively located on the two cantilever beams (R1 is arranged on the surface of the micro-cantilever beam in a U-shaped surrounding rectangular hole structure, and is close to the micro-cantil...

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Abstract

The invention discloses a piezoresistive micro-cantilever beam sensor based on hole slot stress concentration and a method for preparing the same. A sensing unit consists of two micro-cantilever beams and four identical piezoresistors which form a Wheatstone bridge; middle oxidation layers of SOI silicon slices are used as the main bodies of the cantilever beams; one of the cantilever beam is used as a detection cantilever beam which is etched with three rectangular hole slots as stress concentration regions; the other cantilever beam is used as a reference cantilever beam which is not processed with a hole slot structure; two of the piezoresistors are arranged on the two cantilever beams; and the other two piezoresistors are positioned on the silicon slices. The invention can greatly improve the sensitivity for the stress detection of the micro-cantilever beam sensor, and maintain a higher measuring bandwidth. The invention can be applied to various piezoresistive type MEMS structures such as force sensor, micro-gyroscope, resonator and the like, and can be applied to the fields of environmental detection, food safety, aerospace and military and the like.

Description

technical field [0001] The invention relates to a sensor and a preparation method thereof, in particular to a piezoresistive micro-cantilever beam sensor and a preparation method based on the stress concentration of a slit structure. technical background [0002] In recent years, sensors based on micro-cantilever structures have become a research hotspot in the field of micro-electromechanical systems. This type of sensor has the characteristics of high sensitivity, high resolution, fast response and miniaturization, and is widely used in the fields of biochemical sensing and detection. There are optical and electrical methods for measuring the bending of a microcantilever. The optical method has high sensitivity, but the system is complicated, and the optical system requires precise calibration, which limits its wide application. The electrical method includes piezoresistive, piezoelectric, capacitive, etc., and its sensitivity is lower than that of the optical method, but...

Claims

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Application Information

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IPC IPC(8): G01N33/50
Inventor 梅德庆汪延成陈子辰
Owner ZHEJIANG UNIV
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