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Method for testing BVceo soft breakdown of semiconductor triode

A testing method and triode technology, applied in the testing of a single semiconductor device, etc., can solve the problems of high manual screening error rate, high production cost, and low production efficiency, so as to improve detection efficiency and accuracy and meet mass production Requirements, the effect of reducing production costs

Active Publication Date: 2009-04-29
FOSHAN BLUE ROCKET ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method is effective, there are many disadvantages: low production efficiency, which cannot meet the requirements of mass production; high production costs, which is not conducive to enterprise competition; high error rate of manual screening, which is not conducive to quality control, etc.

Method used

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  • Method for testing BVceo soft breakdown of semiconductor triode
  • Method for testing BVceo soft breakdown of semiconductor triode
  • Method for testing BVceo soft breakdown of semiconductor triode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 3

[0067] Embodiment three, as shown in table 6

[0068] Table 6:

[0069]

Embodiment 4

[0070] Embodiment four, as shown in Table 7.

[0071] Table 7:

[0072] M# ItemName MinLimit MaxLimit Bias-1 Bias-2 Time .

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. 2 BV CEO —50.00V —200.0V I CEO 1=—500uA Vmax=—200V 3.00ms 3 DEF VALUE=—3.00 4 DELTA —200.0 VALUE=#2 VALUE=#3 5 I CEO —5.000μA V CE =#4V 25.0ms .

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[0073] According to the methods described in the above two embodiments, compared with the prior art, the comparison results are as shown in Table 8:

[0074] Table 8:

[0075]

Embodiment 5

[0076] Embodiment five, as shown in Table 9.

[0077] Table 9:

[0078]

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PUM

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Abstract

The invention discloses a test method for judging whether a semiconductor dynatron suffers BVCEO soft breakdown. A current nominal value ICEO1 of test condition IC of BVCEO is regarded as an initial condition to measure corresponding voltage VCEO 1; current value ICEO 2 is used as newly added initial condition to measure corresponding voltage VCEO 2; or VCE which has a voltage difference delta V with the voltage value VCEO 1, is used as newly added initial condition, to measure corresponding current value ICEO2'; and the ratio of the VCEO1 to the VCEO2 is compared with a first set standard value, or the measured ICEO2' is compared with a second set standard value. The method has high screening success rate, is favorable for quality control, can improve detecting efficiency, meet the requirements of mass production, reduce production cost and enhance competitiveness of an enterprise.

Description

technical field [0001] The invention relates to the technical field of testing semiconductor triode production, in particular to a method for screening soft breakdown defective products of the semiconductor triode by testing the soft breakdown parameters of the semiconductor triode. Background technique [0002] Semiconductor triode is also called crystal triode, sometimes referred to as transistor or bipolar transistor. It is the main electronic device in electronic circuit. According to its internal structure, transistor can be divided into NPN type and PNP type. Its structure and Graphical symbols are as Figure 1a , Figure 2b shown. According to its structure, it can be seen that no matter which type of transistor is composed of three regions and two PN structures, the three regions are called the emitter region, the base region and the collector region. An electrode derived from each of the three regions is called emitter e, base b, and collector c. The PN junction ...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 张国光谭杰杨林姚剑锋张国俊
Owner FOSHAN BLUE ROCKET ELECTRONICS
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