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Stacked photolithography alignment mark

A lithography alignment and stacking technology, which is applied in the direction of microlithography exposure equipment, optics, and photolithography exposure equipment, etc., to achieve the effect of saving space

Active Publication Date: 2009-04-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And in the stacking process of the existing lithographic alignment marks, the alignment (alignment mark) units cannot be placed on different layers of the same position, and the positions of the alignment units of each layer must be staggered from each other

Method used

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  • Stacked photolithography alignment mark
  • Stacked photolithography alignment mark
  • Stacked photolithography alignment mark

Examples

Experimental program
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Embodiment Construction

[0011] The present invention as figure 2 As shown, the first metal layer 201 and the third metal layer 205 of the photolithographic alignment mark are the same as the original metal layers, without any modification, that is, 1 is still a metal, 2 is still an oxide, and the second metal layer 203 A significant change has been made, that is, where the alignment unit of the first metal layer is metal, the alignment unit of the second metal layer 203 is oxide, and the alignment unit of the first metal layer is The place where the oxide is placed is metal in the alignment unit of the second metal layer 203, and it is ensured that the middle part of the alignment unit in the second metal layer 203 is still an oxide, such as image 3 shown. Moreover, 202 and 204 are still via layers, that is, the via layers are still arranged crosswise with the metal layers. Stacked lithography alignment marks generally consist of 3 to 12 metal layers and via layers cross-stacked together, such as...

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Abstract

The invention relates to a stackable photo-etching alignment mark, consisting of a plurality of metal layers and through-hole layers which are arranged in an intersected way. In two adjacent metal layers, the position of metal (1) in the aligning unit of the first metal layer (201) changes into oxide (2) in the second layer (203); the position of the oxide (2) in the first metal layer (201) changes into the metal (1) in the second layer (203); and the middle part of the aligning unit of each metal layer is the oxide (2). The photo-etching alignment mark can greatly save space on a cutting track.

Description

technical field [0001] The invention relates to a photolithographic alignment mark, in particular to a stacked photolithographic alignment mark. Background technique [0002] Existing stacks of lithographic alignment marks such as figure 1 As shown, a plurality of metal layers (101, 103, 105...) and a plurality of via layers (102, 104...) are cross-stacked. Among the existing metal layers, The alignment units of each layer are exactly the same, that is, at the same position, they are either 1 metal or 2 oxide. In addition, in the existing stacking process of photolithographic alignment marks, alignment mark units cannot be placed on different layers at the same position, and the positions of alignment mark units on each layer must be staggered from each other. For example, under the existing SPM (scribe-lane primary mark) lithographic alignment mark design rules exemplified in the examples of the present invention, the space occupied by the alignment unit in each metal lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F9/00
Inventor 杨晓松
Owner SEMICON MFG INT (SHANGHAI) CORP