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Stereo air exhaust loop and plasma processing apparatus

A plasma and exhaust ring technology, applied in the direction of plasma, electrical components, gaseous chemical plating, etc., can solve the problems of small conduction area, scattered plasma distribution, poor gas fluidity, etc., and achieve the best conduction area big effect

Inactive Publication Date: 2009-05-27
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Because the exhaust ring 8 is a planar structure, the conduction area is small, so that the gas fluidity in the reaction chamber 4 is not good, and the plasma distribution is dispersed.

Method used

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  • Stereo air exhaust loop and plasma processing apparatus
  • Stereo air exhaust loop and plasma processing apparatus
  • Stereo air exhaust loop and plasma processing apparatus

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Embodiment Construction

[0016] Stereo exhaust ring and plasma processing device of the present invention, its preferred specific embodiment is as figure 2 As shown, the three-dimensional exhaust ring includes a body 3, which is a cylindrical structure, and a plurality of through holes 9 are opened on the wall of the cylindrical structure. The body 3 is a cylindrical structure in the shape of a truncated cone.

[0017] Preferred specific embodiment two such as image 3 As shown, the body 3 is a cylindrical tubular structure.

[0018] The body 3 can also be an arc-shaped cylindrical structure, for example, the wall of the cylindrical structure adopts a curved surface or an arc surface, or other forms of three-dimensional structure.

[0019] The cross-section of the through hole 9 can be circular, elliptical, oblong, triangular or trapezoidal, and can also be polygonal or elongated.

[0020] The longitudinal section of the through hole 9 can be rectangular, trapezoidal, funnel-shaped, etc.

[0021]...

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Abstract

The invention discloses a solid exhaust ring and a plasma machining device. The solid exhaust ring has a cylindrical solid structure; the inside of a reaction cavity of the plasma machining device is provided with the solid exhaust ring; the upper periphery of the solid exhaust ring is connected with the reaction cavity; and the lower periphery of the solid exhaust ring is connected with a substrate chuck in the reaction cavity. The device can enlarge admittance area, can design admittance areas of different height layers respectively so as to adjust pumping amount of different height layers above the substrate and adjust the uniformity of air current. In addition, the device can accumulate the plasma to a smaller space above the substrate, thereby contributing to the uniformity of etching reaction.

Description

technical field [0001] The invention relates to a semiconductor processing device, in particular to a three-dimensional exhaust ring and a plasma processing device. Background technique [0002] In the field of semiconductor processing, semiconductor substrates need to be processed by plasma in the reaction chamber of the plasma processing device, such as etching and vapor deposition. Therefore, it is necessary to apply radio frequency to the reaction chamber, so that the process gas entering the reaction chamber is excited into plasma, and then semiconductor processing is performed. [0003] Since the material of the reaction chamber is generally aluminum, even though the surface of the reaction chamber has been treated (usually anodized), it will still react with the plasma in the chamber, causing damage to equipment parts or polymer damage. deposition. Therefore, it is necessary to confine the plasma to a certain area during the etching process and separate the vacuum f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/3065H01L21/311H01L21/3213H01L21/205H01L21/285H01L21/31H01L21/3205H01L21/67C23C16/44C23C16/513C23F4/00H01J37/32H05H1/00
Inventor 胡谦
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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