Chemico-mechanical polishing liquid
A chemical machinery, polishing liquid technology, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., to achieve the effects of low growth rate, long storage time, and high stability
Active Publication Date: 2009-06-10
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to provide a chemical mechanical polishing liquid with higher stability in order to overcome the problem of storage stability of the acidic chemical mechanical polishing liquid in the prior art
Method used
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Embodiment 1～36
[0018] Table 1 provides the chemical mechanical polishing liquid embodiment 1~36 of the present invention, according to the formula in the table, each component is simply and evenly mixed, and the balance is water, and then adopts potassium hydroxide, ammonia water and nitric acid to adjust to a suitable pH value, The polishing liquid of each embodiment can be prepared.
[0019] Table 1 Chemical mechanical polishing liquid embodiment 1~36 of the present invention
[0020]
[0021]
[0022]
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The present invention discloses a chemical and mechanical polishing liquid, which comprises grinding particles and water. The polishing liquid also comprises one or more of the following components: organic phosphonic acid, polycarboxylic acid compounds, low-grade alkyl ethanol and carbohydrate. The growth rate of the particle size of the grinding particles along with the extension of time in thepolishing liquid is low. The chemical and mechanical polishing liquid has the advantages of higher stability and longer storing time and service life.
Description
technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] In the field of chemical mechanical polishing (CMP) in the semiconductor industry, the chemical mechanical polishing fluids used are mainly divided into acidic and alkaline slurries. Among them, the stability of alkaline slurry is relatively good, but there is no suitable oxidizing agent, and the problems of surface cloud point and slight scratches are easily caused during the polishing process. Acid slurry shows certain advantages in this respect. However, the size of the abrasive particles in the acidic slurry will gradually grow under the action of the chemical components in the slurry as the storage time prolongs. When the particle size is larger than 120 nanometers, phenomena such as sedimentation and stratification will occur, which will seriously affect the polishing quality and even cause product failure. Therefore, controlling the growth of abrasi...
Claims
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IPC IPC(8): C09G1/02C09K3/14H01L21/304
Inventor 宋伟红姚颖陈国栋包建鑫
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD