Semiconductor element and its manufacture
A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor lasers, etc., can solve problems such as reduced reliability, insufficient surface flatness, and deterioration of electrical characteristics, so as to improve manufacturability and flatness and the effect of superior crystallinity
Active Publication Date: 2009-06-10
MITSUBISHI ELECTRIC CORP
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, when a nitride-based semiconductor layer is grown on a GaN substrate using the technique of Patent Document 1, the surface of the nitride-based semiconductor layer is not sufficiently flat, and furthermore, sufficient crystallinity cannot be ensured.
Therefore, when forming a semiconductor element using this nitride-based semiconductor layer, there is a problem that its electrical characteristics deteriorate or its reliability decreases.
In addition, from the viewpoint of manufacturability of semiconductor elements, it is not desirable to make the upper surface of the GaN substrate largely inclined.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0029] figure 1 It is a perspective view showing the structure of GaN substrate 10 according to the embodiment of the present invention. The GaN substrate 10 of this embodiment has a hexagonal crystal structure, and light-emitting elements such as semiconductor lasers and light-emitting diodes and semiconductor elements such as high-frequency electronic devices are formed using the GaN substrate 10 .
[0030] Such as figure 1 As shown, the upper surface 10 a of the GaN substrate 10 has an offset angle θ in the direction relative to the C plane, ie, the (0001) plane. Therefore, the upper surface 10a of the GaN substrate 10 and the direction perpendicular to the direction and parallel to the C-plane as the rotation axis are obtained by rotating the plane parallel to the C-plane by an angle θ. faces parallel. In this embodiment, the offset angle θ is set to be greater than or equal to 0.1° and less than or equal to 1.0°.
[0031] Including the GaN substrate 10 of this embo...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1 DEG nor more than 1.0 DEG in a <1-100> direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.
Description
[0001] This application is a divisional application to: [0002] Title of invention: Semiconductor element and method for manufacturing semiconductor element [0003] Application date: October 27, 2005 [0004] Application number: 200510118514.8 technical field [0005] The present invention relates to a semiconductor element having a nitride-based semiconductor layer on a gallium nitride (GaN) substrate and a manufacturing method thereof. Background technique [0006] Nitride-based semiconductors such as gallium nitride have been used or studied as light-emitting elements and other electronic devices, and blue light-emitting diodes and green light-emitting diodes have been put into practical use due to their characteristics. In addition, using nitride-based semiconductors, blue-violet semiconductor lasers are being developed as next-generation high-density optical disk light sources. [0007] Conventionally, when manufacturing a light-emitting device using a nitride-base...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L33/00H01S5/00H01L33/16H01L33/32
Inventor 大野彰仁竹见政义富田信之
Owner MITSUBISHI ELECTRIC CORP