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MOS device with low injection diode

A device and drain technology, applied in the field of metal oxide semiconductor devices and their manufacturing, can solve the problems of limiting the performance of DMOS power devices, efficiency loss, etc.

Active Publication Date: 2009-06-24
ALPHA & OMEGA SEMICON INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some applications, such as synchronous rectification, the stored charge and the forward voltage drop of the body diode can also lead to loss of efficiency
These factors together limit the performance of DMOS power devices

Method used

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  • MOS device with low injection diode
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Experimental program
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Embodiment Construction

[0017] The invention can be implemented in various ways, including as a process, apparatus, system, combination of things, computer-readable medium (such as a computer-readable storage medium), or a computer network (where program instructions are transmitted through optical links or communication link send). In this specification, these implementations, or any other form that the invention may take, are referred to as techniques. A component described as "configured to perform a task" such as a processor or a memory includes both general-purpose components that are temporarily configured to perform a task at a given time and special-purpose components that are manufactured to perform a task. In general, the order of disclosed process steps may be varied within the scope of the invention.

[0018] A detailed description of one or more embodiments of the invention is presented below along with accompanying figures that illustrate the principles of the invention. While the inv...

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PUM

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Abstract

A semiconductor device is formed on a semiconductor substrate. The device includes a drain, an epitaxial layer overlaying the drain, and an active region. The active region includes a body disposed in the epitaxial layer, having a body top surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and into the body, an active region contact electrode disposed within the active region contact trench, wherein a thin layer of body region separating the active region contact electrode from the drain.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of co-pending U.S. Patent Application No. 11 / 900,616, entitled POWER MOS DEVICE, filed September 11, 2007, and U.S. Patent Application No. 11, filed February 11, 2005. Continuation of 11 / 056,346 (now patent number 7,285,822), entitled POWER MOS DEVICE, both of which are hereby incorporated for all purposes. technical field [0003] The present invention relates to metal oxide semiconductor (MOS) devices and methods of manufacturing the same. Background technique [0004] Power MOS devices are commonly used in electronic circuits. Depending on the application, different device characteristics may be expected. An example application is a DC-DC converter that includes one power MOS device as a synchronous rectifier (also known as a low-side FET) and another power MOS device as a control switch (also known as a high-side FET). Low-side FETs usually require a smaller on-resista...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor A·巴哈拉王晓彬潘继S-P·魏
Owner ALPHA & OMEGA SEMICON INC