Method for preparing ZnO thick film

A thick film, thick film heating technology, applied in the direction of zinc oxide/zinc hydroxide, material resistance, etc., can solve the problems of decreased stability, difficult control, low sensitivity, etc.

Inactive Publication Date: 2009-08-19
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of this process are: (1) ZnO polycrystalline powder and its doping are realized by mechanical mixing, the doping is uneven, the crystal grains are too agglomerated or loose, and the microstructures such as grain boundaries, pores, and crystal orientations are difficult to control, etc., resulting in Thick film is easy to peel off, low sensitivity and stability decline; (2) Because the coating process is difficult to ensure the thickness uniformity of thick film, resulting in large differences in film resistance and gas sensing performance between components, which is not conducive to the standardization of gas sensor components; (3) Due to the uncertainty of the coating process, it is difficult to control the microstructure and gas-sensing properties of ZnO thick film stably, which makes it difficult to explore the gas-sensing mechanism of ZnO materials.
[0004] At present, there are coating methods, Langmuir-Blodgett (LB) method, layer-by-layer assembly method, solvent evaporation method and in-situ growth method for the preparation of hydrotalcite-like material films, but most of the above methods are for nano-sheet particles. and the prepared film is usually selective to the substrate, it is difficult to prepare a dense thick film
However, for the large-grain flake basic zinc salt, the above-mentioned process cannot be used to prepare a dense thick film. Therefore, it is necessary to seek a new film-forming process to prepare a thick film of basic zinc salt, and then pyrolyze it to obtain a high-quality zinc oxide thick film. very necessary

Method used

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  • Method for preparing ZnO thick film
  • Method for preparing ZnO thick film
  • Method for preparing ZnO thick film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] ZnSO 4 Dissolve in deionized water to form a 1M precursor solution, and adjust the pH value to 0.02M with NaOH solution.

[0025] The precursor solution was reacted under hydrothermal conditions at 150 °C for 5 hours, and the obtained flake Zn 4 SO 4 (OH) 6 0.5H 2 After O was washed with deionized water, it was dispersed in deionized water to obtain a slurry.

[0026] The slurry is filtered by vacuum filtration, and the filtration is carried out on a sand core funnel and a microporous filter membrane of cellulose acetate (0.22 micron in pore size). After filtration, Zn is formed on the microporous membrane 4 SO 4 (OH) 6 0.5H 2 O thick film.

[0027] ZnCl 2 Dissolve in 5% PVA solution to form PVA / Zn glue, and cover the glue on the glass substrate by uniform glue method.

[0028] Zn on the microporous membrane 4 SO 4 (OH) 6 0.5H 2 The O thick film is cut to the same size as the substrate, and then the Zn 4 SO 4 (OH) 6 0.5H 2 O thick film is pasted on th...

Embodiment 2

[0032] ZnCl 2It was dissolved in deionized water to form a 1M precursor solution, and the pH value was adjusted to be near neutral with NaOH solution.

[0033] The precursor solution was reacted under hydrothermal conditions at 220 °C for 10 hours, and the obtained flake Zn 5 (OH) 8 Cl 2 ·H 2 After O was washed with deionized water, it was dispersed in deionized water to obtain a slurry.

[0034] The slurry is filtered by vacuum filtration, and the filtration is carried out on a sand core funnel and a microporous filter membrane of cellulose acetate (0.22 micron in pore size). After filtration, Zn is formed on the microporous membrane 5 (OH) 8 Cl 2 ·H 2 O thick film.

[0035] ZnCl 2 Dissolve in 5% PVA solution to form PVA / Zn glue, and cover the glue on the silicon wafer substrate by uniform glue method;

[0036] Zn on the microporous membrane 5 (OH) 8 Cl 2 ·H 2 The O thick film is cut to the same size as the substrate, and then the Zn 5 (OH) 8 Cl 2 ·H 2 O th...

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Abstract

The invention provides a method for preparing a ZnO thick film. The method comprises the following steps: dispersing flaky basic zinc salt grains into water to form precursor slurry; filtering the precursor slurry by a microporous filtering film to make the flaky basic zinc salt grains autogenously assembled into an orientation basic zinc salt thick film; transferring the basic zinc salt thick film on the microporous filtering film onto a substrate; and heating and decomposing the thick film to obtain the ZnO thick film. The method uses the flaky basic zinc salt as the precursor to prepare the ZnO thick film, and the prepared ZnO thick film has the advantages of good orientation, even thickness and stable structure.

Description

technical field [0001] The invention relates to a method for preparing zinc oxide thick film. Background technique [0002] ZnO thick film is an important gas-sensing material, which has the advantages of good stability and high selectivity, so it has an important application prospect in gas detection. Traditional ZnO thick films are generally prepared by coating and sintering process, and the process is generally as follows: (1) Synthesize ZnO precursor powder; (2) Grind ZnO powder with dopant and solvent into slurry; (3) Grind the material The slurry is coated on the substrate; (4) the substrate coated with the slurry is sintered. The disadvantages of this process are: (1) ZnO polycrystalline powder and its doping are realized by mechanical mixing, the doping is uneven, the crystal grains are too agglomerated or loose, and the microstructures such as grain boundaries, pores, and crystal orientations are difficult to control, etc., resulting in Thick film is easy to peel ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02G01N27/12
Inventor 张五星黄云辉薛丽红
Owner HUAZHONG UNIV OF SCI & TECH
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