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Flash memory management method and computer system

A memory management and computer system technology, applied in the field of memory device management, can solve the problems of reducing the reading speed, increasing data reading operations, etc., so as to reduce random access memory space and improve writing and reading speed. Effect

Inactive Publication Date: 2011-08-17
INTEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the read operation, in order to find the latest updated data content, it is necessary to traverse (visit) the data stored in the log block in reverse order from the end of the log block, thus adding a lot of unnecessary Data reading operation, which reduces the speed of reading

Method used

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  • Flash memory management method and computer system
  • Flash memory management method and computer system
  • Flash memory management method and computer system

Examples

Experimental program
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Embodiment

[0025] figure 1 A computer system 100 according to an embodiment of the present invention is shown, including a flash memory 101 , a processor 102 and a random access memory device 103 . The processor 102 manages the flash memory 101 according to received instructions and by executing predetermined program codes. According to an embodiment of the present invention, the flash memory 101 may be a memory device with the characteristic that the minimum unit of erasable data is larger than the minimum unit of writeable data, such as NAND or NOR flash memory. The flash memory 101 can be configured with at least one mapping block, modification block and cache block, wherein for NAND type flash memory, the mapping block, modification block and cache block can respectively include a plurality of pages (page), and for the NOR type flash memory, the map block, the modification block and the cache block can respectively include a plurality of sectors (sectors). For the sake of brevity, ...

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PUM

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Abstract

A flash memory management method and a computer system are used for managing a flash memory device; the flash memory management method comprises the steps of: receiving a write instruction which includes a write logical address and established data, and is used for writing the established data into the flash memory device, and writing the established data to a blank page of a modified block whichcorresponds to a mapping block if the page of the mapping block which corresponds to the write logical address is used; the flash memory management method also comprises the steps of: reading a cachepage which corresponds to the modified block into a random access memory device by a cache block according to the write logic address; reading data fields of the cache page in sequence in the random access memory device so as to obtain the position information of the blank page in the modified block; and writing the established data in the blank page of the modified block according to the obtained position information. The invention can greatly enhance the write and read speed of the flash memory and occupy less space of the random access memory device.

Description

technical field [0001] The invention relates to a management method of a memory device, in particular to a method for optimizing the read and write operation performance of the flash memory device. Background technique [0002] Flash memory is a special type of nonvolatile memory that can store data and be electrically erased. Flash memory based storage devices have low power consumption and are relatively small in size compared to disk memory based storage devices. Therefore, flash memory devices are currently frequently used memory devices in some handheld electronic computing devices, such as digital cameras, mobile phones, or personal digital assistants (PDAs). [0003] In disk storage devices, new data can overwrite old data. However, in the flash memory device, if the previously stored data is to be updated, a block range must be erased first, that is, the unit of the read and write operation of the flash memory device can be page (page) or sector (sector) as the ba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/06
Inventor 李榕王华桥金跃峰
Owner INTEL CORP