Light-emitting diode and method for manufacturing same

Abstract

The invention provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a substrate as well as a first type semiconductor layer, an active layer and a second type semiconductor layer which are overlapped on the substrate. A groove runs through from the second type semiconductor layer to the first type semiconductor layer. A first type electrode is arranged in the groove and contacted with the first type semiconductor layer, and a second type electrode is arranged on and contacted with the second type semiconductor layer. A dielectric material conformal layer is arranged in the groove and is positioned above the first type electrode to separate the first type electrode from the second type electrode. The first type electrode is netlike, and the second type electrode is comb-like or is provided with an annular branched electrode. Compared with the prior art, the light-emitting diode and the method improve the light evenness and the luminous efficiency, avoid damages to the light-emitting diode when the first type or the second type electrode is fractured, and do not increase the process complexity and the process difficulty.

Description

technical field [0001] The invention relates to a light-emitting component and a manufacturing method thereof, in particular to an electrode structure of a light-emitting diode and a manufacturing method thereof. Background technique [0002] As a high-quality light source for green and energy-saving lighting in the new era, light-emitting diodes are more and more widely used due to their own advantages. Consequently, the industry has increasingly urgent demands for high-power LEDs, and the so-called high-power LEDs are usually realized by enlarging the size of the LEDs to provide a larger light-emitting area. This large-area light-emitting diode also produces many problems while providing a larger light-emitting area: First, the increase in the area of ​​the diode does not necessarily mean the increase in the light-emitting area; because usually the current will choose the path with the lowest impedance, resulting in light emission. The area will be relatively concentrated...

AI Technical Summary

Problems solved by technology

This large-area light-emitting diode also produces many problems while providing a larger light-emitting area: First, the increase in the area of ​​the diode does not necessarily mean the increase in the light-emitting area; because usually the current will choose the path with the lowest impedance, resulting in light emission. The area will be relatively concentrated in one place and the light will be uneven

This traditional method uses ITO (Indium Tin Oxide) to improve the current distribution, but because of the material characteristics of ITO itself, it is not easy to make direct electrical contact with AlGaInN materials, and it is necessary to grow a P-type semiconductor with a thickness of about 50A between the ITO and the P-type semiconductor. , and it is necessary to add a graded layer to reduce the resistance between AlGaInN and GaN due to the difference in potential, thus increasing the difficulty of the process

In addition, if the current blocking layer structure (CurrentBlocking) is used, the current will not be confined under the electrode, but the complexity of the mask in this process will be greatly increased and the design will be difficult

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