GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method

Abstract

The invention relates to a GeTe / Sb2Te3 multilayer nanocomposite phase transition film, the GeTe film and the Sb2Te3 film of the GeTe / Sb2Te3 multilayer nanocomposite phase transition film are arranged alternately. The GeTe / Sb2Te3 multilayer nanocomposite phase transition film of the invention enjoys high phase change rate and high thermal stability; the invention can effectively enhance the on andoff ratio of a phase change memory, thus ensuring the reliability of the data readout better.

Description

A kind of GeTe / Sb2Te3 nanocomposite multilayer phase change film and its preparation method technical field The invention relates to a material in the technical field of microelectronics. More specifically, the invention relates to a GeTe / Sb2Te3 nanocomposite multilayer phase change film for a phase change memory and a preparation method thereof. Background technique The basic principle of phase-change memory is to use phase-change materials as storage media. Phase-change materials can reversibly change between amorphous and crystalline states under the action of light, electricity and other forms of energy. Phase-change memory uses phase-change materials in non-crystalline The difference between the high and low resistivity in the crystalline state and the crystalline state realizes the storage of data "0" and "1". The basic working process of phase change memory includes SET process and RESET process. Apply a wide and weak electric pulse to heat the phase change materia...

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Problems solved by technology

The binary phase change material Sb2Te3 has a high crystallization speed, which can meet the requirements of phase change memory for high-speed storage, but its low crystallization temperature is very unfavorable for the stability of data in phase change memory, and the crystal state of this material Low resistivity requires a large RESET current; GeTe, as another type of phase change material, has a high crystallization temperature and a high melting point, which can meet the thermal stability requirements of phase change memory, but its crystallization speed is relatively slow. Slow, affecting the storage speed of phase change memory

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