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Driving circuit for realizing rapid discharge of pixel thin film transistor

A technology of thin-film transistors and driving circuits, which is applied in the field of fast discharge of pixels, can solve problems such as abnormal shutdown screens, and achieve the effect of improving quality and solving abnormal shutdown screens

Active Publication Date: 2011-06-08
K TRONICS (SUZHOU) TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of this, the main purpose of the present invention is to provide a driving circuit for realizing fast discharge of pixel TFT, which solves the problem of abnormal shutdown screen and improves the quality of shutdown screen

Method used

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  • Driving circuit for realizing rapid discharge of pixel thin film transistor
  • Driving circuit for realizing rapid discharge of pixel thin film transistor
  • Driving circuit for realizing rapid discharge of pixel thin film transistor

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Embodiment 1

[0032] Embodiment 1 is: the TFTLCD pixel driving circuit mainly includes a connected reset chip and a MOS transistor, and the type of the MOS transistor is a P-channel enhanced MOS transistor. What needs to be pointed out here is that for P-channel enhanced MOS transistors, the characteristics of P-channel enhanced MOS transistors are: when the difference between the gate voltage and source voltage of the MOS transistor Vgs M When it is less than a certain threshold, the P-channel enhanced MOS tube will be turned on. This threshold is called the turn-on voltage of the P-channel enhanced MOS tube, expressed in U GS(th) express. in addition, image 3 Shown is a schematic diagram of a transfer characteristic curve of a P-channel enhancement type MOS transistor. image 3 , the abscissa represents Vgs M , the ordinate represents the drain current I of the MOS tube dM , the intersection of the transfer characteristic curve and the abscissa represents U GS(th) . From image 3 ...

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PUM

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Abstract

The invention discloses a driving circuit for realizing the rapid discharge of a pixel thin film transistor. The driving circuit is used for control through improving the pixel electrode shutoff voltage during shutoff and providing the improved pixel electrode shutoff voltage to a grid electrode driving chip so as to realize the rapid discharge of a pixel thin film transistor in a liquid crystal display. Due to the adoption of the driving circuit, the problem of the abnormal shutoff image is solved, and the shutoff image quality is improved.

Description

technical field [0001] The invention relates to a technology for realizing fast discharge of pixels, in particular to a driving circuit for realizing fast discharge of pixel TFTs in a thin film transistor (TFT) liquid crystal display (LCD). Background technique [0002] At present, the light-emitting mechanism of TFTLCD is usually: by applying different voltages to each pixel on the TFTLCD to make the pixels achieve different brightness, thereby realizing different gray scales of the pixels. The composition structure of the existing TFTLCD basic structure is as follows: figure 1 shown. figure 1 Among them, the basic structure of TFTLCD includes source driver chip 1, gate driver chip 2 and liquid crystal panel 3. And the liquid crystal panel 3 includes a large number of pixels. Among them, the source driver chip 1 applies the driving voltage used to drive the data line of the liquid crystal panel 3, that is, the signal line, and usually drives the column display of the liq...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/36H03K17/687
Inventor 王洁琼
Owner K TRONICS (SUZHOU) TECH CO LTD
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