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Preparation method of Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiber heterostructure

An in-situ growth and heterostructure technology, which is applied in nanostructure manufacturing, microstructure technology, microstructure devices, etc., can solve the problems of inconspicuous heterostructure and uneven distribution of ZnO, and achieve the effect of high purity

Inactive Publication Date: 2010-12-08
HEILONGJIANG UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is in order to solve the Zn that existing method obtains 2.33 Sb 0.67 o 4 -Zn in ZnO micro-nanostructure 2.33 Sb 0.67 o 4 and ZnO uneven distribution and heterogeneous structure are not obvious, providing a kind of in-situ growth Zn 2.33 Sb 0.67 o 4 Preparation method of coated ZnO fiber heterostructure material

Method used

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  • Preparation method of Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiber heterostructure
  • Preparation method of Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiber heterostructure
  • Preparation method of Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiber heterostructure

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specific Embodiment approach 1

[0008] Specific implementation mode one: Zn is grown in situ in this implementation mode 2.33 Sb 0.67 o 4 The preparation method of coated ZnO fiber heterostructure material is as follows: 1. ZnO and Sb 2 o 3 Grind in a ball mill with a rotational speed of 150 to 200r / min for 3 to 5 hours according to a mass ratio of 2:1, and then add activated carbon to obtain a mixture, wherein the mass ratio of activated carbon to ZnO is 1:1; 2. Put the mixture obtained in step 1 into Quartz boat, then put the quartz boat into the middle of the tube furnace, spread the base material 5-10cm downstream of the quartz boat, and then close the two ends of the tube furnace, under the condition that the positive pressure in the tube furnace is 15-20Pa Heat the tube furnace to 950-1050°C at a heating rate of 10-30°C / min, then keep it warm for 15-25 minutes, then release the positive pressure in the furnace, and take out the substrate material to obtain in-situ growth Zn 2.33 Sb 0.67 o 4 Coate...

specific Embodiment approach 2

[0023] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the rotational speed of the ball mill in Step 1 is 160-190 r / min. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0024] Embodiment 3: The difference between this embodiment and Embodiment 1 is that the rotational speed of the ball mill in step 1 is 170-185 r / min. Others are the same as in the first embodiment.

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Abstract

A preparation method of Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiber heterostructure relates to a method for coating ZnO fiber heterostructure. The invention solves the problems that in the Zn2.33Sb0.67O4-ZnO micro-nano structure obtained by the existing method, the distribution of Zn2.33Sb0.67O4 and ZnO is not uniform and the heterostructure is not obvious. The method of the invention comprises the following steps of: milling and mixing ZnO and Sb2O3 in a ball mill, adding active carbon to obtain a mixture, filling the mixture in a quartz boat, then putting the quartz boat inthe middle of a tubular furnace, flatly laying substrate material at the downstream of the quartz boat, raising the temperature of the tubular furnace according to the heating rate of 10-30 DEG C / min,then preserving the temperature for 15-25min, leaking out the positive pressure in the furnace and taking out the substitute material. The Zn2.33Sb0.67O4 in-situ growth material coated with ZnO fiberheterostructure has obvious heterostructure.

Description

technical field [0001] The invention belongs to the field of preparation of micro-nano oxide semiconductor heterostructures, in particular to a method for coating ZnO fiber heterostructures. Background technique [0002] At present, many documents show that the mixture of doped ZnO or ZnO and other element ternary compounds will improve its gas-sensing, photoelectric and other properties to varying degrees. The results show that when the ZnO film appears ZnSb 2 o 6 and Zn 2.33 Sb 0.67 o 4 In the new phase, its piezoelectric performance and gas sensitivity performance are greatly improved (B.L.Zhu, C.S.Xie, A.H.Wang, Electrical conductivity and gas sensitivity of Zn-Sb-O thick films, Materials Research Bulletin, 2004, 39, 409 -415). However, the preparation method and performance research of coated ZnO fibers have not been reported yet. Contents of the invention [0003] The technical problem to be solved by the present invention is in order to solve the Zn that exis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B81C1/00
Inventor 张海军赵国刚孟凡娜
Owner HEILONGJIANG UNIVERSITY OF SCIENCE AND TECHNOLOGY