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Method for removing residue

A technology of residues and wafers, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of wafer finished product reduction, wafer scrapping, etc., and achieve the effect of improving yield and reducing scrap rate

Active Publication Date: 2011-04-20
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, it has been found in practical applications that if the wafer is exposed to air for more than 1 minute after etching and cleaning with deionized water but before drying, the surface of the shallow trench isolation 13 for isolating different devices will be formed. Residue Defect 12
Such residue defects greatly reduce the finished product of the wafer, and even cause the entire wafer to be scrapped

Method used

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  • Method for removing residue
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Embodiment Construction

[0011] One embodiment of the residue removal method provided by the present invention will be described in detail below in conjunction with the accompanying drawings, in order to further understand the technical scheme, purpose and beneficial effects of the invention.

[0012] See Figure 2 for combined image 3 , the input-output device 20 and the core device 21 need to be fabricated on the wafer 2 shown in FIG. 2 . Due to the different functions of the two devices, the thickness of the gate oxide layer of the input-output device 20 is required to be 70 angstroms, and the thickness of the gate oxide layer of the core device 21 is required to be 32 angstroms. The production method is as follows:

[0013] S100: After the shallow trench isolation (STI) 22 for isolating the input-output device 20 and the core device 21 is completed on the wafer 2, a layer of oxide with a uniform thickness is formed on the surface of the input-output device 20 and the core device 21 for the first ...

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Abstract

The invention discloses a method for removing residue, which is used in the technique for producing gate oxide of different thicknesses on a wafer. Residue on the surface of a wafer is cleaned using acid solution before producing gate oxide of different thicknesses. Compared with the prior art, the removing method effectively removes residue on the surface of a shallow trench, reduces the scrap rate of products and improves the yield while ensuring the thickness of the shallow trench for separating different semiconductor devices on the wafer accords with requirements without influence on relative gate oxide.

Description

technical field [0001] The invention relates to a process for removing residues on a wafer surface in the field of semiconductors, in particular to a method for removing residues on a wafer surface in a gate oxide layer manufacturing process. Background technique [0002] It is often necessary to fabricate a variety of different semiconductor devices on the same wafer, such as input / output (I / O) devices and core (core) devices. Due to the different functions realized by different semiconductor devices, the parameter requirements for each part are also different. figure 1 It is a partial cross-sectional schematic diagram of an existing wafer, and an input-output device 10 and a core device 11 need to be fabricated on the wafer 1 . [0003] The process of forming the gate oxide layer at the input-output device 10 and the core device 11 is: first, an oxide layer with the same thickness is formed on the surfaces of the two devices; then photoresist is used to protect the oxide ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/306
Inventor 李强丁士成
Owner SEMICON MFG INT (SHANGHAI) CORP