Method for controlling result parameter of integrated circuit manufacturing procedure

A technology of result parameters and manufacturing procedures, applied in circuits, comprehensive factory control, comprehensive factory control, etc., can solve problems such as limited application range, and achieve the effect of wide application range

CN101571714BActive Publication Date: 2012-10-03UNITED MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2012-10-03

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Abstract

The invention relates to a method for controlling the result parameter of an integrated circuit manufacturing procedure, which comprises the following steps: firstly, acquiring the value of at least one first variable related to the result parameter of the manufacturing procedure; then using the relational expression of the first variable and the result parameter to calculate the difference valuebetween the discreet value and the target value of the result parameter according to the value of the first variable; then correcting a subsequent manufacturing procedure having at least one second variable related to the result parameter, wherein the subsequent manufacturing procedure is controlled according to the difference value and the relational expression of the second variable and the result parameter to adjust the second variable; and reducing the difference value by the influence of the second variable on the result parameter. The at least one first variable and the at least one second variable comprise two or more different physical quantities.
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Description

technical field

[0001] The present invention relates to a method for controlling an integrated circuit (IC) manufacturing procedure, in particular to a method for controlling the result parameters of an integrated circuit manufacturing procedure. Background technique

[0002] As the line width of IC components decreases, the control of their characteristics becomes more and more important. A characteristic of an IC device is typically associated with a plurality of steps of the IC manufacturing process that include a number of variables associated with the characteristic greater than or equal to the number of the steps. These variables are the key to controlling the characteristics of IC components.

[0003] The IC manufacturing process control in the prior art belongs to a self-correction method, which is to first determine the standard value of each variable corresponding to the target value of the desired control characteristic, and then control each process related to t...

Examples

Embodiment Construction

[0024] figure 1 A flowchart of a method for controlling result parameters of an integrated circuit manufacturing process according to an embodiment of the present invention is shown. In a practical example, the above-mentioned IC manufacturing process is a metal oxide semiconductor transistor (MOS transistor) manufacturing process, and the resulting parameter is the drain saturation current (Idsat) or the threshold voltage of the MOS transistor.

[0025] The IC manufacturing process includes processes 1-N related to the result parameter, before, after and / or in the middle of which other processes irrelevant or lowly related to the result parameter may be inserted. The i-th process in the process 1-N includes at least one i-th variable related to the result parameter; for example, the first process includes a first variable V related to the result parameter 1 , the 2nd process includes 2 2nd variables V related to the result parameters 2(1) with V 2(2) etc. Therefore, the n...