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Semiconductor device and method of forming a semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as increasing the cost of manufacturing devices

Active Publication Date: 2012-05-23
NXP USA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The additional area of ​​the MOSFET is formed through a thermal oxide layer and a dedicated mask opening, which greatly increases the cost of manufacturing the device

Method used

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  • Semiconductor device and method of forming a semiconductor device
  • Semiconductor device and method of forming a semiconductor device
  • Semiconductor device and method of forming a semiconductor device

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Embodiment Construction

[0021] described below and in Figure 2 to Figure 9 , designate certain areas as specific materials, conductivity, and / or types. However, this is for ease of explanation only and is not intended to be limiting. From the description given herein, those skilled in the art will understand that to obtain different device functions, different semiconductor materials can be used, and the doping of different regions of the device can be changed.

[0022] The present disclosure will be described with reference to semiconductor devices including vertical semiconductor devices such as N-channel vertical MOSFET devices. A vertical semiconductor device includes a source electrode positioned above a drain electrode such that current flows primarily in a vertical direction when the device is in an on state. It should be understood that the present disclosure is not limited to vertical devices nor to N-channel MOSFET devices, and applies equally to other semiconductor devices such as later...

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Abstract

A method of forming a semiconductor device comprises providing a substrate (4), providing a semiconductor layer (6) of a first conductivity type over the substrate (4), forming a first region (8) of the first conductivity type in the semiconductor layer (6), and forming a gate (26) over the semiconductor layer (6) and over part of the first region (8). The gate outlines a first portion (58) of a surface (10) of the device of a second conductivity type dopants are provided to the outlined first portion (58) to provide a second region (12) in the semiconductor layer (6). The first region (8) andsecond region (12) are driven into the semiconductor layer so as to form a pre-control region (8) of the first conductivity type extending under a portion of the gate (26) and a graded body region (12) of the first conductivity type extending under the pre-control region (8). A body region (14) is formed by providing dopants of the second conductivity type to the outlined first portion (58).

Description

technical field [0001] The present disclosure relates to a semiconductor device and a method of forming the semiconductor device. Background technique [0002] Semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) are commonly used as power devices in applications such as automated electronics, power supplies, and communications, which require devices to operate at a few tenths of amperes (A) to hundreds of amperes (A ) range of current to operate. [0003] Traditionally, by applying an appropriate voltage to the gate electrode of a MOSFET device, the device turns on (ie, the device is in an on state) and a channel connecting the source and drain regions will be formed to allow current to flow. When a MOSFET device is turned on, the relationship between current and voltage is approximately linear, which means that the device acts like a resistor. This resistance is called on-state resistance Ddson. [0004] Typically, MOSFET devices wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/08H01L21/336H01L29/423
CPCH01L29/66712H01L29/7802H01L29/42368H01L29/0878
Inventor 叶夫根尼·斯特凡诺夫阿兰·德朗让-米歇尔·雷内斯
Owner NXP USA INC
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