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Photolithographic method to reduce antenna effect

An antenna effect and lithography technology, applied in the processing of photosensitive materials, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of low wafer yield, ineffective charge release, and increased friction, etc. Improve yield, eliminate antenna effects, reduce damage

Active Publication Date: 2011-11-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the cleaning sub-step, the wafer is rotated at a high speed, which increases the friction, making it easier to accumulate charges between the deionized water and the IMD film, and these charges cannot be effectively released
The edge of the design window of the wafer circuit pattern is the weak part of the design. When the generated charge reaches a certain amount, it will be strung along these places to the gate of the wafer (antenna effect). In severe cases, it can even damage the gate oxide. layer, destroying the electrical properties of the wafer
Moreover, the damage caused by this antenna effect is generally not detectable in the wafer acceptance test (WAT), and can only be detected in the wafer probing (CP) stage, resulting in a very low yield rate of the wafer.

Method used

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  • Photolithographic method to reduce antenna effect

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Embodiment Construction

[0012] One embodiment of the photolithography method provided by the present invention will be described in detail below in conjunction with the accompanying drawings, in order to further understand the technical solution, purpose and beneficial effects of the invention.

[0013] see figure 1 and combine figure 2 , the photolithography method of this embodiment is applied to the process of forming via holes (Via) on the metal interconnection interlayer dielectric (IMD) film of the wafer. The IMD film can be SiO 2 , SiN, SiC, SiON dielectric films, or the above-mentioned dielectric films doped with B, P, C, and F impurities. see figure 1 , the photolithography method includes coating photoresist step 1 on the IMD film, exposing step 2, developing step 3 and drying step 4. In the photoresist coating step 1, positive photoresist or negative photoresist can be coated as required, and the coated photoresist should be evenly distributed. With a positive photoresist, the expose...

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Abstract

The invention discloses a photolithography method for reducing antenna effect, which is used for photolithography wafer insulating medium layer. The photolithography method includes coating a photoresist on the insulating medium layer; performing an exposure step and a developing step; the developing step includes a cleaning substep of cleaning the surface of the insulating medium layer, and in the cleaning substep, the wafer The rotation speed is less than or equal to 2000 revolutions per minute. Compared with the prior art, the present invention provides a wafer photolithography method, by reducing the rotation speed of the wafer in the cleaning sub-step of the development step, the damage to the wafer caused by the antenna effect is reduced, and the quality of the wafer is effectively improved. Rate.

Description

technical field [0001] The invention relates to a photolithography process in the field of semiconductors, in particular to a photolithography method capable of reducing antenna effects. Background technique [0002] Antenna Effect (Antenna Effect) is due to design reasons. In the back-end process of the wafer, the metal is easy to accumulate charges and affects the antenna-like effect of the front-end process along the weak part of the design. In the process of forming via holes (Via) on the interlayer dielectric (IMD) film on the surface of the wafer, in order to completely remove the residual developer and some reactants, the developing step includes a rinse sub-step (rinse). The cleaning sub-step uses deionized water (DIW) to rinse the IMD film. Since both the deionized water and the IMD film are non-conductive, two non-conductive substances will rub against each other to generate electrostatic charges. [0003] In the cleaning sub-step, the wafer is rotated at a high s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/36G03F7/40G03F7/26
Inventor 靳颖张凯元
Owner SEMICON MFG INT (SHANGHAI) CORP