Check patentability & draft patents in minutes with Patsnap Eureka AI!

Conductive clip for semiconductor device package

A device packaging and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., to achieve the effect of efficient heat dissipation

Active Publication Date: 2009-12-02
CHONGQING WANGUO SEMICON TECH CO LTD
View PDF3 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But, described semiconductor chip package needs to carry out flip-chip process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive clip for semiconductor device package
  • Conductive clip for semiconductor device package
  • Conductive clip for semiconductor device package

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] Although the following detailed description contains many specific details for purposes of illustration, anyone of ordinary skill in the art will appreciate that many changes and substitutions to the following details will fall within the scope of the present invention. Therefore, the exemplary embodiments of the present invention described below shall not deviate from the basic principles of the present invention as claimed, nor impose any limitations on the present invention.

[0060] According to an embodiment of the present invention, such as Figures 1A-1B A semiconductor device package 100 is shown, which includes a V-shaped clip that is bonded to a lead frame with a non-exposed gate metal wire. like Figure 1A As shown, the device package 100 includes a welded lead frame 102 and a semiconductor device 114, for example, a MOS device with a top source S, a top gate G and a bottom drain D, through which the bottom drain D It is connected to the main body of the lea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A clip for a semiconductor device package may include two or more separate electrically conductive fingers electrically connected to each other by one or more electrically conductive bridges. A first end of at least finger is adapted for electrical contact with a lead frame. The bridges are adapted to provide electrical connection to a top semiconductor region of a semiconductor device and may also to provide heat dissipation path when a top surface of the fingers is exposed. A semiconductor device package may include the clip along with a semiconductor device and a lead frame. The semiconductor device may have a first and semiconductor regions on top and bottom surfaces respectively. The clip may be electrically connected to the top semiconductor region at the bridges and electrically connected to the lead frame at a first end of at least one of the fingers.

Description

technical field [0001] The present invention generally relates to semiconductor chip packaging, and more particularly, to a source clip suitable for chip packaging to provide an electrical connection method to reduce spreading resistance and enhance heat dissipation. Background technique [0002] In the packaging of semiconductor devices, a metal clip is generally used to provide an electrical connection between a semiconductor chip mounted on a lead frame and the lead frame. For example, U.S. Patent No. 6,624,522 discloses a metal oxide semiconductor (MOS) gate device wafer having a gate side covered by a passivation layer, preferably a photosensitive liquid epoxy layer , or a silicon nitride layer, or composed of other similar substances. Said wafers are coated with fabrics, shields, or liquid epoxy resin is deposited on the wafer surface. After the material dries, the coated wafer is patterned using standard photolithographic techniques to expose the wafer, and the open...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L23/495H01L21/50H01L21/60H01L21/56
CPCH01L23/49551H01L24/48H01L2924/13055H01L2924/3025H01L2924/014H01L24/34H01L23/4952H01L23/492H01L24/40H01L2924/13091H01L2223/54486H01L2924/01005H01L2924/01082H01L2924/01033H01L24/83H01L2224/73219H01L23/49568H01L2224/48465H01L2224/83801H01L24/28H01L2224/73221H01L24/39H01L24/73H01L23/49524H01L24/29H01L23/4334H01L2924/19041H01L23/544H01L2924/01006H01L2924/01078H01L24/41H01L23/49562H01L2924/19043H01L2924/01023H01L2224/48247H01L2224/32245H01L2924/1306H01L2924/1301H01L2924/1305H01L2224/451H01L2924/00014H01L2924/181H01L2224/40095H01L2224/40245H01L2224/48095H01L2224/37011H01L2224/371H01L24/37H01L2224/83192H01L2224/84815H01L24/84H01L2224/84345H01L2924/00H01L2924/00012H01L2924/3512H01L2224/45099H01L2224/05599
Inventor 石磊刘凯孙明
Owner CHONGQING WANGUO SEMICON TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com