Electrical contacts for a semiconductor light emitting apparatus
A technology for electrical contacts and light-emitting devices, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as reducing the light-emitting area of LEDs
Active Publication Date: 2009-12-02
LUMILEDS HLDG BV
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Problems solved by technology
However, employing multiple contacts reduces the light-emitting area of the LED, so that electrical contact design in LEDs in general involves a trade-off between current spreading and the available light-emitting area remaining after the contacts have been formed
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[0040] refer to figure 1 and figure 2 , a semiconductor structure for use in a semiconductor light emitting device is shown generally at 100 . The structure 100 includes a first layer 102 of a first conductivity type and an active layer 104 covering the first layer 102 . The active layer 104 is used to generate light. The structure 100 also includes a second layer 106 of the second conductivity type covering the active layer 104 .
[0041]Structure 100 also includes at least a first elongated electrical contact 108 and a second elongated electrical contact 110 extending through second layer 106 and active layer 104 and in electrical contact with first layer 102 . The first and second electrical contacts 108 and 110 are oriented at an angle to each other, the first contact having a first end 112 proximate the second contact. The first end 112 is sufficiently spaced from the second contact 110 so that when current is applied to the first layer 102 through the contacts 108 a...
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A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.
Description
technical field [0001] The present invention relates generally to semiconductor light emitting devices, and more particularly to electrical contacts for semiconductor light emitting devices. Background technique [0002] Semiconductor light emitting devices such as light emitting diodes (LEDs) provide efficient light sources and are more robust than incandescent light bulbs and fluorescent tubes. Advances in LED technology and processing have facilitated the use of such devices to replace traditional light sources, such as in commercial and residential lighting applications. Efficiency and reliability are therefore important factors for LEDs used in lighting applications. Furthermore, the need to increase light output from LEDs continues to grow, resulting in higher operating currents. [0003] Typically, LEDs are fabricated with n-type and p-type contacts on the same side of the semiconductor die so that light can be emitted from the light output surface unimpeded by elec...
Claims
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IPC IPC(8): H01L33/00H01L33/20H01L33/38
CPCH01L33/20H01L33/382
Inventor S·夏菲诺J·J·尤宾
Owner LUMILEDS HLDG BV