Method for producing refracting surface incidence detector
A fabrication method, detector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc.
Inactive Publication Date: 2010-12-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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The invention discloses a method for producing a refracting surface incidence detector, which comprises the following steps: 1, adopting an MOCVD method to grow a detector material structure on a substrate; 2, producing p-type ohmic contact on the upper surface of the detector material structure; 3, downward etching on the periphery of the p-type ohmic contact to form a detector mesa structure; 4, growing a first SiO2 layer on the upper surface of a device formed in step 3; 5, corroding partial first SiO2 layer on one side of the detector mesa structure to form a bar-shaped mask pattern structure; 6, adopting a chemical corrosion method to downward corrode a dovetail groove on the mask pattern structure; 7, corroding the first SiO2 layer on the surface of the device, and re-growing a second SiO2 layer on the surface of the whole device; 8, filling a polymer into the dovetail groove to ensure that the surface of a material is level, and corroding the second SiO2 layer on the p-type ohmic contact; 9, producing a p-type metal electrode on one side of the detector mesa structure; 10, thinning the substrate, and producing a metal electrode on the rear side of the substrate; and 11, removing the polymer in the dovetail groove, and cleaving a chip to finish the production of the whole device.
Description
Manufacturing method of refracting surface incident light detector technical field The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a high-speed, high-responsive, and easy-to-couple refraction surface incident light detector. Background technique High-speed and high-responsive photodetectors are one of the core components of high-speed optical networks. At the same time, increasing the saturated output power makes it more widely used, and increasing its optical coupling tolerance will greatly simplify packaging and save costs. Therefore, the current research on photodetectors focuses on improving the speed and responsivity, increasing the coupling tolerance, and increasing the saturated output power. The coupling tolerance of surface-incidence light detection is much larger than that of waveguide-type photodetectors, but in order to achieve higher responsivity, it is necessary to increase the material thickness of...
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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 廖栽宜张云霄周帆赵玲娟王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
