Interlayer insulation film, interconnect structure, and methods for production thereof

Abstract

An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H / C) becomes 0.8 to 1.2. The interlayer insulation film is reduced in the generation of a leak current and the film shrinkage which may be caused by thermal annealing, has a low dielectric constant, and is stable.

Description

technical field [0001] The present invention relates to a multilayer wiring structure of substrates such as semiconductor elements, semiconductor chip mounting substrates, and wiring boards, in particular, the structure of an interlayer insulating film, and also relates to a semiconductor device having the multilayer wiring structure, a wiring board, and electronic devices including the same. device. Background technique [0002] Conventionally, in order to insulate between wiring layers in a multilayer wiring structure formed on a semiconductor substrate or the like, an interlayer insulating film is formed. [0003] In such a multilayer wiring structure, the problem of signal delay caused by parasitic capacitance between wirings and wiring resistance cannot be ignored, and the use of an interlayer insulating film having a low dielectric constant (Low-k) is required, and various structures ( Refer to Patent Document 1). [0004] In Patent Document 1, it is proposed to use ...

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Problems solved by technology

[0003] In such a multilayer wiring structure, the problem of signal delay due to parasitic capacitance between wirings and wiring resistance cannot be ignored, and the use of an interlayer insulating film with a low dielectric constant (Low-k) is required, and various structures have been proposed ( Refer to Patent Document 1)

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