Pretreatment method in chemical vapor deposition
A chemical vapor deposition and pretreatment technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of Cpk value not reaching, CVD film thickness non-uniformity, reducing product wafer Cpk, etc. problems, to achieve the effect of improving uniformity and improving process capability index
Inactive Publication Date: 2012-03-21
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
Therefore, due to the difference in the composition of the surface film between the first use of the baffle wafer and its subsequent repeated use, the thickness of the CVD film between different batches of product wafers will be uneven, reducing the Cpk of the product wafer. Make the Cpk value less than 1.33 target value
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[0015] For a better understanding of the present invention, an embodiment of the present invention will be described below with reference to the accompanying drawings. Throughout the drawings, the same reference numerals designate the same or similar parts.
[0016] image 3 It is a schematic flowchart of a chemical vapor deposition pretreatment method according to an embodiment of the present invention. In this specific embodiment, chemical vapor deposition is used to deposit a 250 angstrom SiN layer on the product wafer, and the wafer boat can accommodate 75 wafers, that is, 75 wafers are produced per batch of CVD, of which 60 product wafers , 15 pcs of baffle wafers, such as figure 1 The distribution shown. When the baffle wafer is used for the first time, the surface layer is 1000 Angstroms of SiO 2 , different from the SiN material required for CVD. Such as figure 1 As shown, step 50 is to make the surface layer into SiO 2 The blocking wafer is placed into the wafe...
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Abstract
The invention particularly relates to pretreatment method in chemical vapor deposition, which is used in the synchronous chemical vapor deposition of a baffle plate wafer and a product wafer. The method mainly comprises the following steps of: depositing a layer of film having the same components as those of the film needed by a product wafer for the chemical vapor deposition on the surface of the baffle plate wafer of which the compositions of the surface film are different from those of the film needed by the product wafer for the chemical vapor deposition. The pretreatment method provided by the invention can reduce the thickness difference of the chemical vapor deposition films of the product wafers in different batches and improve the process capability index of the product.
Description
Technical field [0001] The invention relates to chemical vapor deposition technology, in particular to a pretreatment method for chemical vapor deposition. Background technique [0002] Chemical vapor deposition (CVD) is a commonly used thin film layer deposition method in wafer production plants, mainly used to deposit thin film materials such as silicon oxide, silicon nitride and polysilicon. The chemical vapor deposition reaction is mainly carried out in the chamber (Chamber) of the CVD equipment, and the chamber has a wafer for placing a product wafer (Production Wafer) that needs to deposit a thin film. In some cases, the number of product wafers that need to be deposited is less than the number of wafers that can be accommodated in the boat, so there is leftover space in the boat. Dummy wafers are usually used to fill the remaining space in the wafer boat, so as to ensure uniformity of film thickness between batches of product wafers with different numbers of product ...
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IPC IPC(8): C23C16/02
Inventor 翟志刚陈彤李瑞秋
Owner SEMICON MFG INT (SHANGHAI) CORP