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TE011-lambada/4-pi mode resonator with three-dimensional structure

A three-dimensional structure and resonator technology, applied in the field of terahertz integrated circuits, can solve the problems of small power output capability and low current of the oscillator

Inactive Publication Date: 2011-09-07
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While the working frequency is increasing due to technological progress, the continuous shrinking of the line width means that the current that can be tolerated is getting smaller and smaller, so the power output capability of the oscillator is getting smaller and smaller.

Method used

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  • TE011-lambada/4-pi mode resonator with three-dimensional structure
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  • TE011-lambada/4-pi mode resonator with three-dimensional structure

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Embodiment Construction

[0017] Such as figure 1 , Figure 4 , Figure 5 , Image 6 As shown, the resonator of the present invention includes more than two active circuits 1 on the silicon substrate layer E, λ / 4 resonators 2 corresponding to the number of active circuits 1 on the packaging layer F, and metal cylinders 3. in TE 011 The TE of the mold includes the first conductive metal plate 4a, the cylindrical waveguide 4b and the second conductive metal plate 4c 011 A cylindrical waveguide resonator 4 and a rectangular waveguide 5 for power output; the two output ends a, b of each active circuit 1 and the two open ends of the corresponding λ / 4 resonator 2 are connected between the silicon substrate layer and the packaging layer Connect at the junction, the two short-circuit ends of each λ / 4 resonator 2 are connected to the cylindrical waveguide resonator 4 on the first conductive metal plate 4a, and the λ / 4 resonator on the first conductive metal plate 4a is connected to the cylindrical The wave...

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Abstract

The present invention discloses a TE011-lambda / 4-pi mode resonator with a three-dimensional structure. Two output ends of each active circuit are connected with two open-circuit ends corresponding to the lambda / 4 resonator at the junction of a silicon chip layer and a packaging layer; two short-circuit ends of each lambda / 4 resonator are connected with TE011 cylindrical wave guide resonator on a first conducting metal plate, and realize energy coupling with a cylindrical wave guide coupling groove seam by the lambda / 4 resonator of the first conducting metal plate; a rectangular wave guide is assembled above a second conducting metal plate, and the two short-circuit ends of each lambda / 4 resonator realize energy coupling with the cylindrical wave guide coupling groove seam by the rectangular wave guide of the second conducting metal plate, and output energy. The TE011-lambda / 4-Pi mode resonator is suitable for power synthesis of silica-based Terahertz sources at the surface of the packaging layer, a passive circuit is separated from the active circuit, the quality factors of the resonator are higher, scale production can reduce the cost obviously, and the TE011-lambda / 4-Pi mode resonator has application values in the fields of Terahertz personal wireless communication, low-power radars and the like.

Description

technical field [0001] The invention relates to a terahertz integrated circuit, in particular to a three-dimensional structure TE 011 -λ / 4-π mode resonators. Background technique [0002] At present, the international research on terahertz has reached a consensus that terahertz is a radiation source with many unique advantages. It is a scientific and technological field that the international academic circles, industrial circles and governments of various countries attach great importance to and pay attention to. The generation of terahertz waves is a basic and key issue of terahertz technology. In recent years, the generation of terahertz oscillations based on existing integrated circuit technology has also attracted more and more attention from researchers in recent years. [0003] From the perspective of application requirements, silicon-based low-power terahertz sources have great application potential. On the one hand, the silicon-based standard integrated circuit pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/24
Inventor 史治国王先锋鲍迎金梦珺陈抗生
Owner ZHEJIANG UNIV
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