Solid-state image pickup device
A camera device, solid-state technology, applied in radiation control devices, image communications, electrical solid-state devices, etc., can solve problems such as noise or troublesome operation, ESD protection circuit 10 and solid-state image sensor degradation, etc., to prevent leakage current, prevent parasitic Effects of MOS transistors
Inactive Publication Date: 2010-03-03
FUJIFILM CORP
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Problems solved by technology
[0014] Leakage current 24 generated in the ESD protection circuit 10 causes noise or operational trouble in the solid-state imaging device 1, resulting in degradation of the ESD protection circuit 10 and the solid-state image sensor 3
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[0082] A specific example of the solid-state imaging device according to the present invention will be described.
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A solid-state image pickup device (1) comprises: an image sensor wafer (2A) including image sensors (3); an optically-transparent protection member (4) connected by use of an adhesive agent (7) via aspacer (5) arranged to surround the image sensors (3); and an electrostatic (ESD) protection circuit (10) disposed on the image sensor wafer (2A) so as to avoid a position corresponding to a connectedsurface where the spacer (5) and the image sensor wafer (2A) are connected. Accordingly, in this configuration, even when polarization occurs in the adhesive agent, since the p-well layer between diffusion layers of the ESD protection circuit is not disposed immediately below the connected surface, the p-well layer is not inverted by electric charges in the element interface and thus parasitic MOS transistor does not turn on, allowing suppression of leak current.
Description
technical field [0001] The present invention relates to a solid-state imaging device in which a wafer in which a solid-state image sensor is formed is connected to an optically transparent protective member via a spacer disposed so as to surround the solid-state image sensor. Background technique [0002] In recent years, solid-state imaging devices composed of CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor) used in digital cameras or mobile phones need to be further miniaturized. [0003] Based on such a request, in order to achieve miniaturization of a solid-state imaging device, a solid-state imaging device and a method of manufacturing the same have been proposed. The image sensor wafer and the optically transparent protective member are connected via a spacer formed in a manner corresponding to a position surrounding each light receiving part, after which the resulting substrate is separated into individual solid-state imaging devices (for ...
Claims
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Login to View More IPC IPC(8): H01L27/14H04N5/335H01L27/146
CPCH01L27/14618H04N5/2253H01L2924/0002H04N23/54H01L2924/00
Inventor 高崎康介家坂守若生秀树
Owner FUJIFILM CORP