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Multichannel current extended type semiconductor constant-current diode

A constant current diode and current expansion technology, applied in semiconductor devices, electric solid state devices, circuits, etc., can solve the problems of limited application area, small current and power, and inability to directly drive loads.

Inactive Publication Date: 2010-03-10
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the current and power are too small, the load cannot be directly driven, and the application is limited

Method used

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  • Multichannel current extended type semiconductor constant-current diode
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  • Multichannel current extended type semiconductor constant-current diode

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Embodiment Construction

[0012] Implementation of the present invention: as figure 1 and figure 2 As shown, the N-type semiconductor region 2 is epitaxially extended on the P+ type semiconductor substrate 1, and the P+ type semiconductor region 3 is diffused on the N-type semiconductor region 2. The P+ type semiconductor region 3 is connected with the P+ type semiconductor substrate 1, and the N-type semiconductor region The region 2 is divided into a first PN junction isolation region 2-1 and a second PN junction isolation region 2-2; a plurality of first P+ semiconductor regions 4-1 are diffused from the gate on the first PN junction isolation region 2-1. A second P+ semiconductor region 4-2 is diffused on the second PN junction isolation region 2-2; a first N+ is diffused on the first PN junction isolation region 2-1 between the diffused first P+ semiconductor regions 4-1. The semiconductor region 5-1, the second N+ semiconductor region 5-2, and the third N+ semiconductor region 5-3 diffused on t...

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Abstract

The invention discloses a multichannel current extended type semiconductor constant-current diode which is characterized in that a N type semiconductor area (2) and a P+ type semiconductor area (3) are extended outwards on a P+ type semiconductor substrate (1); the P+ type semiconductor area (3) divides the N type semiconductor area (2) into two PN junction isolation areas; upper grids of the isolation areas are dispersed with a first P+ semiconductor area (4-1), a second P+ semiconductor area (4-2), a first N+ semiconductor area (5-1), a second N+ semiconductor area (5-2) and a third N+ semiconductor area (5-3); and a multichannel N-JFET and PNP transistor composite structure is formed. The diode connects the positive electrode of a power supply to the positive electrode of a device, connects the negative electrode of the power supply to the negative electrode of the device (also can be connected to the negative electrode by load), and can realize constant-current characteristics in a fundamental circuit. The size of the constant-current value can be realized by designing the N-JFET channel quantity and current gain of PNP. The structure can reach output constant current of 20mA-100mA series.

Description

technical field [0001] The invention relates to a multi-channel current expansion type semiconductor constant current diode which utilizes the physical process of the semiconductor structure to realize the constant current characteristic, and belongs to the technical field of two-terminal semiconductor devices. Background technique [0002] In the prior art, the constant current source is a technology commonly used in electronic equipment and devices, and is generally realized by electronic modules or integrated circuits. A constant current diode is a semiconductor device that realizes a constant current source. At present, international constant current diodes are usually products with low current and low power (output current: 0.5mA? 0mA;), which are mainly used for setting the reference current in electronic circuits. Because the current and power are too small to directly drive the load, the application is limited. Contents of the invention [0003] The object of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L29/06
Inventor 刘桥
Owner GUIZHOU UNIV
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