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Semiconductor device and manufacturing method thereof

A semiconductor and component technology, applied in the field of gate structure and its manufacturing method, can solve the problems of gate dielectric layer and metal gate electrode pollution, component performance reduction, edge damage, etc., and achieve the effect of improving performance and reliability

Inactive Publication Date: 2010-03-10
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some problems arise when integrating a high-k dielectric layer / metal gate electrode in a CMOS process, for example, when patterning or etching the gate, the high-k gate dielectric layer and the Edges of metal gate electrodes may be harmed
Furthermore, the high-k gate dielectric and the metal gate electrode may be contaminated during subsequent heat treatment processes
Therefore, the performance of the device is reduced, such as carrier mobility, threshold voltage and reliability.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0040] Embodiments of the present invention are enumerated below and described in detail with accompanying drawings. The components and designs of the following embodiments are for the purpose of simplifying the present invention, but are not intended to limit the present invention. For example, it is mentioned in the description that the first feature is formed on the second feature, which includes the embodiment that the first feature and the second feature are in direct contact, and also includes an additional feature between the first feature and the second feature. Embodiments of other features, therefore, the first feature is not in direct contact with the second feature. In addition, various features may be drawn simplified with different dimensions for the purpose of simplicity and clarity.

[0041] According to various embodiments disclosed in the present invention, figure 1 A flowchart showing a method 100 for fabricating a semiconductor device, wherein the gate st...

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Abstract

The present disclosure provides a semiconductor device that includes a semiconductor substrate, a transistor formed in the substrate, the transistor including a high-k gate dielectric formed over thesubstrate, the high-k gate dielectric having a first length measured from one sidewall to the other sidewall of the high-k gate dielectric, and a metal gate formed over the high-k gate dielectric, themetal gate having a second length measured from one sidewall to the other sidewall of the metal gate, the second length being smaller than the first length.

Description

technical field [0001] The present invention relates to a semiconductor element, and in particular to a gate structure and its manufacturing method. Background technique [0002] Semiconductor integrated circuits (integrated circuits, ICs) have undergone rapid development. With the development of IC materials and design, each generation of IC has smaller and more complex circuits than the previous generation. However, these developments have also increased the complexity of the IC process. In order to realize these advanced ICs, an equivalent development in the IC process is also required. [0003] In the process of IC development, when the geometric size of IC (that is, the smallest component (or line) that can be obtained by the process) gradually shrinks, the density of functional components (that is, the interconnection components per unit chip area) gradually increase. The benefits of size reduction lie in increased production efficiency and reduced associated proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L21/28
CPCH01L29/4966H01L29/7833H01L21/28088H01L21/28247H01L29/6659H01L29/517H01L21/28194
Inventor 陈建豪侯永田林纲正黄国泰
Owner TAIWAN SEMICON MFG CO LTD