Transistor structure, dynamic random access memory structure and manufacturing method thereof
A dynamic random access and memory technology, which is applied in semiconductor/solid-state device manufacturing, transistors, semiconductor/solid-state device components, etc., and can solve problems such as poor quality of transistor components
Active Publication Date: 2011-05-18
NAN YA TECH
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Problems solved by technology
However, the quality of silicon produced by epitaxial technology is inferior to that of single crystal silicon in silicon wafers, so the properties of the obtained transistor components will be poor
Method used
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Embodiment Construction
[0028] see figure 1 , figure 1 A schematic cross-sectional view of a specific embodiment of a DRAM structure according to the present invention is shown. The DRAM structure according to the present invention includes a substrate 10 , a transistor structure 12 , a bit line 14 , a word line 16 , and a capacitor structure 18 . The substrate 10 has a plane 10a and an annular column 10b protruding from the plane 10a, and the annular column 10b serves as an active area. The annular cylinder 10b is annular and thus has a hollow interior, an outer wall at the periphery and an inner wall at the hollow. "Ring" in this article does not specifically refer to a circular ring, and a square or other ring shape is acceptable without any special limitation. The annular thickness of the annular cylinder is not particularly limited, preferably, for example, 100 to 3000 , preferably 500 to 2000 , depending on process technology and component characteristics. The transistor structure 1...
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The invention discloses a transistor structure, a dynamic random access memory structure and a manufacturing method thereof. In the dynamic random access memory structure, an active area has an annular cylinder shape, and has a novel vertical transistor structure; a grid electrode of the transistor structure is filled in the hollow annular cylinder; upper and lower source / drain electrodes are respectively positioned on the upper and lower parts of the annular cylinder; an embedded bit line is positioned in a substrate under the transistor structure, a word line is horizontally arranged above the grid electrode, and a capacitor structure is positioned above the word line and the grid electrode, and is electrically connected with the upper source / drain electrode by a node contact; and the node contact has an n-shaped cover body shape, is electrically connected with the capacitor structure through the top surface of the n-shaped cover body-shape, and is electrically connected with the upper source / drain electrode through the side bottoms of the n-shaped cover body shape, and the word line passes through a hollow part of the n-shaped cover body shape of the node contact.
Description
technical field [0001] The present invention relates to a vertical transistor, a dynamic random access memory (DRAM) structure including the vertical transistor and a manufacturing method thereof. Background technique [0002] With the trend of miniaturization of various electronic products, the design of DRAM components must also meet the requirements of high integration and high density. The DRAM device includes a transistor and a memory storage device. The memory storage device is usually a capacitive structure. The trench capacitor structure and the stacked capacitor structure are widely used in the industry, which can effectively reduce the size of the memory unit and properly utilize the chip space to manufacture a high-density DRAM structure. Generally speaking, for trench capacitors, deep trenches are etched in the semiconductor substrate and trench capacitors are formed therein, and then transistors are manufactured. Stacked capacitors are usually stacked up afte...
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IPC IPC(8): H01L27/108H01L29/78H01L23/522H01L21/8242H01L21/336H01L21/768H10B12/00
CPCH10B12/033
Inventor 黄文魁
Owner NAN YA TECH