Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of carbon nanotube yarn

A carbon nanotube and carbon nanotube structure technology, which is applied in the field of carbon nanotube yarn preparation, can solve the problems of limited application of carbon nanotube yarn, limited length of carbon nanotube yarn, etc., and achieves good electrical conductivity.

Active Publication Date: 2011-11-30
TSINGHUA UNIV +1
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the preparation length of carbon nanotube yarns is currently limited by the size of carbon nanotube arrays. From a carbon nanotube array with a height of 200 microns grown on an existing 4-inch silicon wafer, the carbon nanotube yarns drawn The length of the carbon nanotube yarn is limited, which limits the application of this carbon nanotube yarn in the macroscopic

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of carbon nanotube yarn
  • Preparation method of carbon nanotube yarn
  • Preparation method of carbon nanotube yarn

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0012] See figure 1 And combine image 3 , The preparation method of carbon nanotube yarn in this embodiment mainly includes the following steps:

[0013] Step 1: Provide a plurality of carbon nanotube arrays 10, preferably, the array is a super-in-line carbon nanotube array.

[0014] See figure 2 In this embodiment, the preparation method of the carbon nanotube array 10 adopts the chemical vapor deposition method, and the specific steps include: (a) providing a plurality of flat substrates 12, the substrates 12 can be selected from P-type and N-type silicon substrates 12, The silicon substrate 12 of the oxide layer, or the aluminum oxide, quartz, and aluminum silicon carbide substrate 12 may be selected. In this embodiment, a 4-inch silicon substrate 12 is preferably used; (b) a uniform catalyst layer 14 is formed on the surface of each substrate 12 mentioned above, The method for forming the catalyst layer on the substrate is an electroplating method or a sputtering method. The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing carbon nanotube yarn, which comprises the following steps: providing a plurality of carbon nanotube arrays; pulling from one carbon nanotube array to obtain a first carbon nanotube structure; Pulling to obtain a second carbon nanotube structure; along the stretching direction, one end of the second carbon nanotube structure is in contact with the end of the first carbon nanotube structure close to the carbon nanotube array to obtain a length-extended carbon nanotube structure; repeating the above extending steps to further extend the length of the carbon nanotube structure; and obtaining a carbon nanotube yarn by using an organic solvent to treat the above carbon nanotube structure.

Description

Technical field [0001] The invention relates to a method for preparing carbon nanotube materials. In particular, it relates to a preparation method of carbon nanotube yarn. Background technique [0002] Carbon nanotube is a hollow tube rolled from graphene sheets, which has excellent mechanical, thermal and electrical properties. The application fields of carbon nanotubes are very broad. For example, it can be used to make field effect transistors, atomic force microscope tips, field emission electron guns, nano templates, and so on. In particular, Fan Shoushan et al. in Nature, 2002, 419:801, Spinning Continuous CNT Yarns, disclosed a pure carbon nanotube yarn drawn from a super-aligned carbon nanotube array. This carbon nanotube yarn includes A plurality of carbon nanotube segments connected end to end under van der Waals force, each carbon nanotube segment has approximately the same length, and each carbon nanotube segment is composed of multiple parallel carbon nanotubes. G...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): D01F9/12D02G3/02
Inventor 廖运鑫姜开利范守善姚湲张长生白先声
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products