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An aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method

A chemical-mechanical and water-slurry technology, which is applied in the direction of polishing compositions containing abrasives, chemical instruments and methods, and other chemical processes, can solve the problem that the slurry composition cannot meet the polishing selectivity.

Active Publication Date: 2010-03-24
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, the slurry compositions developed so far cannot satisfy the high polishing selectivity, and the development of slurry compositions with higher polishing selectivity has been demanded.

Method used

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  • An aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method
  • An aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method
  • An aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method

Examples

Experimental program
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Effect test

Embodiment 1-23

[0082] Examples 1-23: Preparation of aqueous slurry composition for CMP

[0083] First, the following materials were used as components for preparing an aqueous slurry composition for CMP.

[0084] As the silica abrasive, PL-1 or PL-3L among colloidal silica of Quartron PL series by FUSO CHEMICAL Co. was used.

[0085] Use P-65 (a kind of copolymer of BASF Co., Mw=3500), L-64 (a kind of copolymer of BASFCo., Mw=3880), Random (a kind of random copolymer of Aldrich Co., Mw =2500) or a propylene oxide-ethylene oxide copolymer having the molecular weight and ethylene oxide repeating unit content disclosed in Table 1 below as a propylene oxide-ethylene oxide copolymer polymerization additive.

[0086] Use BRIJ-58 (a surfactant of Aldrich Co., with polyethylene glycol stearyl ether as the main component, Mw=1224), BRIJ-76 (a surfactant of Aldrich Co., with polyethylene glycol Glycol stearyl ether as main component, Mw=711) or BRIJ-78 (a kind of surfactant of Aldrich Co., take po...

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Abstract

The present invention relates to an aqueous slurry composition for chemical mechanical polishing that can show good polishing rate to the target layer, and yet has a high polishing selectivity and can maintain superior surface condition of the target layer after polishing, and a chemical mechanical polishing method. The aqueous slurry composition for chemical mechanical polishing (CMP) includes abrasives; an oxidant; a complexing agent; and a polymeric additive including at least one selected from the group consisting of a polypropyleneoxide, a propyleneoxide-ethyleneoxide copolymer, and a compound represented by Chemical Formula 1.

Description

technical field [0001] The present invention relates to an aqueous slurry composition for chemical mechanical polishing (CMP), and a chemical mechanical polishing method. More particularly, the present invention relates to an aqueous slurry composition for chemical mechanical polishing, which can exhibit a good polishing rate for a target layer, also has a high polishing selectivity, and can maintain an excellent polishing rate of the target layer after polishing. Surface state, the present invention also relates to a chemical mechanical polishing method. Background technique [0002] High integration and high performance of semiconductor devices have always been required. In particular, in order to achieve high integration of semiconductor devices, it is necessary to form a multilayer wiring structure, and to form the multilayer wiring structure, each wiring layer needs to be planarized to form another wiring layer. [0003] So far, various methods such as reflow method, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/302
CPCH01L21/3212H01L21/7684C09G1/02C09K3/14
Inventor 申东穆崔银美曹昇范河贤哲
Owner LG CHEM LTD
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