Quantum interference transistor using graphene and methods of manufacturing and operating the same

Abstract

A quantum interference transistor may include a source; a drain; N channels (N>=2), between the source and the drain, and having N-1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.

Description

technical field [0001] Example embodiments relate to transistors and / or methods of manufacturing and / or operating the same. Also, example embodiments relate to quantum interference transistors using graphene and / or methods of manufacturing and / or operating the quantum interference transistors. Background technique [0002] One method of increasing the degree of integration of a semiconductor device may be to reduce the size of elements of the semiconductor device. Therefore, an attempt to reduce the size of the element that has not been considered before can be made. For example, the length of the channel of transistors commonly used in semiconductor devices can be much larger than the coherent wavelength λ of electrons coherence . Therefore, the volatility of electrons is not considered in conventional semiconductor transistors. [0003] However, the degree of integration of current semiconductor devices may increase and / or the design specifications of semiconductor dev...

AI Technical Summary

Problems solved by technology

This type of quantum interference transistor can operate at high frequencies around 10 THz and can have low power consumption, but can be difficult to manufacture

Specifically, in the case of quantum interference transistors utilizing 2D electron gases or superconductors, quantum interference transistors can operate at temperatures much lower than 50K, and thus would be difficult to use

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