Pressure sensor structure of compound diaphragm

A pressure sensor and composite diaphragm technology, which is applied in the direction of elastic deformation meter-type fluid pressure measurement, etc., can solve the problems of immature, unclear, and stuck in the experimental stage of device preparation, so as to reduce the complexity of the process and reduce the size of the membrane. Sheet deflection, the effect of expanding the measuring range

Inactive Publication Date: 2010-06-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

We believe that further in-depth research is needed on the piezoresistive properties of porous silicon and device preparation. For example, the physical mechanism of t

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  • Pressure sensor structure of compound diaphragm
  • Pressure sensor structure of compound diaphragm
  • Pressure sensor structure of compound diaphragm

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Embodiment Construction

[0025] see Figure 1-Figure 3 Shown, a kind of composite diaphragm pressure sensor structure of the present invention comprises:

[0026] A monocrystalline silicon layer 1, one side of the monocrystalline silicon layer 1 is concave, and the bottom surface of the concave monocrystalline silicon layer 1 is a flat structure 3 (such as figure 1 ); the bottom surface of the concave monocrystalline silicon layer 1 is an island structure 4; the island structure 4 is a single island (such as figure 2 ), Shuangdao (such as image 3 ) or a multi-island structure (not shown); the island structure 4 is a square island, rectangular island or circular island structure;

[0027] A porous silicon layer 2, the porous silicon layer 2 grows on the concave inner surface of the monocrystalline silicon layer 1, thus forming a planar type 3 structure (such as figure 1 ), island structure 4 (such as figure 2 , image 3 ); The island structure 4 is a single island (such as figure 2 ), Shuangd...

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Abstract

The invention relates to a pressure sensor structure of a compound diaphragm, comprising a monocrystalline silicon layer and a porous silicon layer, wherein one side of the monocrystalline silicon layer is concave and the porous silicon layer grows on the concave inner surface of the monocrystalline silicon layer. On the premise that the sensitivity of a low-range sensor is not influenced, the compound diaphragm of porous silicon and monocrystalline silicon is adopted for reducing the nonlinear deformation of the diaphragm, thereby reducing the flexibility of the diaphragm and finally achieving the purpose of enhancing the sensitivity or reducing the nonlinearity of the low-range sensor.

Description

technical field [0001] The invention is used in the technical field of pressure sensor manufacturing, and in particular relates to a composite membrane pressure sensor structure. Background technique [0002] When the sensitive diaphragm of the silicon pressure sensor is thinned, the large deflection effect gradually becomes prominent, and the influence of the nonlinear deformation of the diaphragm cannot be ignored. As a result, the linear characteristics of the sensor will deteriorate. The thinner the diaphragm, the more prominent this phenomenon is. At present, island-membrane structures and beam-membrane island structures are mostly used to solve related problems. The principle is to concentrate the stress in a relatively small range to achieve high-quality low-pressure measurement. The problem brought by these structures is that the process is more difficult, and the cost of the device increases accordingly. The main objective of the present invention is to reduce the ...

Claims

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Application Information

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IPC IPC(8): G01L7/08
Inventor 王晓东樊中朝季安邢波杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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