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IGBT series circuit based on control of ARM microprocessor

A technology of microprocessors and series circuits, applied in the direction of control/regulation systems, instruments, electrical components, etc., can solve problems such as IGBT damage, achieve the effects of reducing interference, circuit introduction, and cost reduction

Inactive Publication Date: 2011-11-16
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When Rg is reduced, the IGBT switching time can be reduced and the loss can be reduced; but when Rg is too small, it can cause oscillation between the gate and the emitter, and the di / dt of the IGBT collector increases, causing the IGBT collector peak voltage and causing the IGBT to be damaged.

Method used

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  • IGBT series circuit based on control of ARM microprocessor
  • IGBT series circuit based on control of ARM microprocessor
  • IGBT series circuit based on control of ARM microprocessor

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Embodiment Construction

[0037] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0038] figure 1 It is a structural block diagram of the hardware system of the present invention. Including ARM microprocessor S3C2410 PWM output circuit, multiple IGBT drive circuits, IGBT protection circuits equal in number to IGBT drive circuits, and voltage monitoring circuits equal in number to IGBT drive circuits; ARM microprocessor S3C2410 PWM output circuits are respectively connected to The input terminals of the respective IGBT drive circuits are connected; each IGBT drive circuit has four output terminals, the first output terminal is connected to the collector of the IGBT, the second output terminal is connected to the gate of the IGBT, and the third output terminal The terminal is connected to one end of the monitoring circuit, the fourth output terminal is connected to the emitter of the IGBT and the other end of the monitoring circuit; o...

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PUM

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Abstract

The invention discloses an IGBT series circuit based on the control of an ARM microprocessor. The series circuit comprises an ARM microprocessor S3C2410PWM output circuit, a plurality of IGBT drive circuits, a plurality of IGBT protective circuits of the number of which is equal to that of the IGBT drive circuits and a plurality of voltage monitoring circuits the number of which is equal to that of the IGBT drive circuits. Ten IGBT series circuits are simulated; and the installation design picture is in a practical application connection mode. A PWM signal sent by an S3C2410 timer is the input signal of the driver M57962L; the drive circuits accurately control on and off of IGBT; the protective circuit comprises an IGBT overvoltage protective circuit, a grid resistor and a static grading resistor, and can protect normal operation of IGBT; the voltage monitoring circuit monitors the voltage of an M57962L power supply power source module to lead the circuit to be operated normally. The IGBT series circuit of the invention can realize series connection of a plurality of IGBTs, and can be applied in high-voltage equipment.

Description

technical field [0001] The invention relates to an IGBT series circuit controlled by an ARM microprocessor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device born in the 1980s. It is a composite device that integrates power MOSFET and GTR on one chip. Its input is very MOSFET and its output is very GTR. Therefore, IGBT has the advantages of fast response and easy driving of MOSFET, high blocking voltage and strong current carrying capacity of GTR. Its operating frequency is within tens of kilohertz, and it has been widely used in various power converters. The biggest advantage of the IGBT is that it can withstand the current impact no matter in the on state or the short circuit state, and because of its short turn-off delay time, it is easy to realize the series connection of devices. [0003] Although some manufacturers have developed high-voltage IGBT modules, such as the 3.3Kv / 1.2kA huge-capacity IGBT module...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/155
Inventor 王剑平余琳黄康盖玲刘孔绚
Owner ZHEJIANG UNIV
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