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Method for forming picture element structure

A technology of pixel structure and isolation structure, applied in optics, instruments, electrical components, etc., can solve the problem that the aperture ratio cannot be effectively reduced.

Inactive Publication Date: 2011-07-20
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Therefore, the existing pixel structure still needs a large area of ​​black matrix to cover the light leakage area, so that the aperture ratio cannot be effectively reduced

Method used

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  • Method for forming picture element structure
  • Method for forming picture element structure
  • Method for forming picture element structure

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Embodiment Construction

[0048] The method for forming a pixel structure according to the present invention will be described in detail below with specific examples and attached drawings. However, the provided examples are not intended to limit the scope of the present invention, and the description of the steps of the method is not intended to limit it. The order of execution, any execution flow recombined by method steps, and any method with equal efficacy are all within the scope of the present invention. The accompanying drawings are for illustration purposes only and are not drawn to original scale.

[0049] Please refer to Figure 3 to Figure 12 , Figure 3 to Figure 12 It is a schematic diagram of a method for forming a pixel structure in a preferred embodiment of the present invention. in, image 3 , Figure 5 , Figure 7 , Figure 9 and Figure 11 For the schematic diagram of the layout, Figure 4 , Figure 6 , Figure 8 , Figure 10 and Figure 12 respectively image 3 , Figure ...

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Abstract

The invention discloses a method for forming a picture element structure, comprising the following steps of: forming a scanning line and data line segments by utilizing a first conducting layer, forming a channel structure, a first isolation structure and a second isolation structure by utilizing a semiconductor layer and a gate insulation layer, and forming a source electrode, a drain electrode and a common electrode by utilizing a second conducting layer. The first isolation structure and the second isolation structure can prevent the common electrode from electrically connecting to the scanning line and the data line segments and simultaneously expose partial data line segments so that the source electrode can directly contact the data line segment to form a data line. Thereby, the method can make the picture element structure with a screen positioned above the data line without utilizing a semitransparent mask or semi-color light-regulating mask and keep the low impedance of the data line.

Description

technical field [0001] The present invention relates to a method for forming a pixel structure, and in particular to a method for forming a shield above data line (SAD) pixel structure. Background technique [0002] In the manufacture of liquid crystal displays, the size of the element pixel aperture ratio directly affects the utilization rate of the backlight source, and also affects the display brightness of the panel. The main factor affecting the aperture ratio is the distance between the pixel electrode and the data line. However, when the pixel is too close to the data line, the stray capacitance (capacitance between pixel and data line, Cpd) it receives will become larger, causing the fully charged charge on the pixel electrode to be lost before the next frame is converted. Because the data lines transmit different voltages, cross talk occurs. [0003] In order to reduce the effect of stray capacitance, many methods have been studied. For example, when there is a st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82G02F1/1362H01L21/768G02F1/1343
Inventor 施明宏刘竹育吴宙秦陈怡君万仁文
Owner AU OPTRONICS CORP