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Plasma process apparatus

A technology of plasma and processing device, applied in the field of plasma processing device, can solve the problem of high adhesion, and achieve the effect of suppressing raising and reducing pollution

Active Publication Date: 2011-10-12
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this etching processing apparatus, there is also a recess in the intersecting region between the mounting surface of the semiconductor wafer and the cylindrical ring, and therefore, when the ring is extended and retracted from the mounting surface, deposits are raised from the recess. more likely

Method used

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  • Plasma process apparatus
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Embodiment Construction

[0034] Below, refer to Figure 1 to Figure 3The structure of the etching processing apparatus 2 which is a plasma processing apparatus which concerns on this embodiment is demonstrated. figure 1 The etching processing apparatus 2 shown in the longitudinal cross-sectional view of FIG. 2 is configured as an apparatus for etching an aluminum (Al) film formed on the surface of a substrate S, which is a square (rectangular or quadrangular) FPD substrate, for example.

[0035] The etching processing apparatus 2 has the processing container 20 which is a vacuum chamber, and this processing container 20 performs an etching process with respect to the board|substrate S in the inside. In the etching processing apparatus 2 according to the present embodiment, in order to be able to process, for example, a large-scale square (rectangular or quadrangular) substrate with at least a long side of 2 m or more, the processing container 20 is formed such that the planar shape is, for example, a...

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Abstract

The present invention provides a plasma processing apparatus, capable of restraining attachment generated by plasma processing from raising and reducing pollution of the objects to be processed. In the plasma processing apparatus where processing air is performed by plasma between an anode electrode and a cathode electrode so as to process the object (S) to be processed, an upper side rectifying wall (51) and a lower side rectifying wall (52) are stacked top and bottom on a carrying station of one electrode, and enclose the object (S) to be processed arranged on the carrying station (3), and the upper side rectifying wall (51) moves between a carrying position on the lower side rectifying wall (52) and an upper side position being off the lower side rectifying wall (52).

Description

technical field [0001] The present invention relates to a technique of supplying a processing gas to an object to be processed, such as a glass substrate for FPD (Flat Panel Display) and a semiconductor wafer, in a processing container, and performing predetermined treatment on the object to be processed using the processing gas. Background technique [0002] In the manufacturing process of LCD (Liquid Crystal Display: liquid crystal display), there exists a process of performing an etching process with respect to the aluminum (Al) film formed on a glass substrate. based on Figure 9 An example of an etching processing apparatus that performs this process will be described. In the figure, 1 is a vacuum chamber, and inside the vacuum chamber 1, a lower electrode is provided for mounting an object to be processed, for example, an FPD substrate S. (hereinafter simply referred to as a "substrate S") mounting table 11, and a processing gas supply unit 12 as an upper electrode fac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01J37/02H01J37/20
CPCH01J37/32449H01J37/32807H01L21/67069
Inventor 南雅人佐佐木芳彦
Owner TOKYO ELECTRON LTD