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CMP slurry composition for barrier polishing for manufacturing copper interconnects, polishing method using the composition, and semiconductor device manufactured by the method

A composition, copper interconnection technology, applied in polishing compositions containing abrasives, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as pattern surface scratches

Active Publication Date: 2010-07-07
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, there is a higher possibility of causing scratches on the surface of the pattern after polishing

Method used

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  • CMP slurry composition for barrier polishing for manufacturing copper interconnects, polishing method using the composition, and semiconductor device manufactured by the method
  • CMP slurry composition for barrier polishing for manufacturing copper interconnects, polishing method using the composition, and semiconductor device manufactured by the method
  • CMP slurry composition for barrier polishing for manufacturing copper interconnects, polishing method using the composition, and semiconductor device manufactured by the method

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Embodiment 1～4

[0043] First, 0.5 wt% of colloidal silica (particle size: 20nm), 0.5 wt% of glycine and 0.1 wt% of benzotriazole (BTA) were mixed with pure water to prepare a slurry for blister copper polishing body composition. The slurry precursor composition was adjusted to have a pH of 7.0 using KOH and nitric acid, mixed with 1.0 wt% hydrogen peroxide and immediately stirred for 10 min before polishing to complete the copper polishing slurry composition. The resulting slurry composition was then used under conditions of a downward force of 2.5 psi, a platen rotation rate of 93 rpm, a head rotation rate of 87 rpm, and a slurry feed rate of 150 mL / min, as well as 1.5 psi Wafers with copper, tantalum and TEOS (tetraethylorthosilicate) films on them were made under the conditions of downward force, platen speed of 93 rpm, head speed of 87 rpm and slurry feed rate of 150 mL / min The first polishing step and the second polishing step are performed sequentially.

[0044] As shown in Table 1 be...

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Abstract

The invention provides a CMP slurry composition for barrier polishing for manufacturing copper interconnects, polishing method using the composition, and semiconductor device manufactured by the method. The composition includes abrasive particles, a copper surface protective agent, a copper corrosion inhibitor, an oxidizing agent, and a pH adjustor, wherein the abrasive particles are non-spherical colloidal silica having a ratio of an average primary particle size to an average secondary particle size of about 0.6 or less and the copper surface protective agent is a carboxyl-functionalized water-soluble polymer.

Description

[0001] References to related applications [0002] This application claims Korean Patent Application No. 10-2008-0137804 filed on December 31, 2008 at the Korean Intellectual Property Office and Korean Patent Application No. 10-2009- filed on September 15, 2009 at the Korean Intellectual Property Office Priority of No. 0086869, the entire disclosure of which is hereby incorporated by reference. technical field [0003] The present invention relates to a chemical-mechanical polishing (CMP) slurry composition (slurry composition) for barrier polishing of copper interconnects. Background technique [0004] With the recent trend toward high integration and high performance large scale integration (hereinafter, referred to as LSI), new microprocessing methods have been developed. Chemical-mechanical-polishing (hereinafter, referred to as CMP), which is one of such methods, is a technique frequently used in methods for manufacturing LSIs, especially in methods for manufacturing m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/768H01L23/522H01L21/304
CPCC09G1/02H01L21/3212H01L21/7684C09K3/1409C09K3/1463
Inventor 李泰永李仁庆崔炳镐朴容淳
Owner CHEIL IND INC