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Method for regulating and controlling filming speed of scheelite film

A film-forming speed, scheelite technology, applied in the field of regulating the film-forming speed of scheelite film, can solve the problems of slow reaction speed, limited promotion, uncontrollable and so on

Active Publication Date: 2012-08-01
赣州市海龙钨钼有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a serious shortcoming in the preparation of tungstate and molybdate polycrystalline films by the current galvanic battery route: the reaction speed is too slow and uncontrollable, and the time-consuming is often tens to hundreds of hours.
This severely limits the further promotion of this technology in the field of thin film preparation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1. MnO 4 - Effect of Ion Concentration on Reaction Rate

[0015] Tungsten sheet (25*15*0.1mm) pre-treated by metallographic sandpaper rough grinding, degreasing 3 ) immersed in saturated Ca(OH) 2 In solution, platinum sheet (2.0*2.0*0.1mm 3 left and right) dipped in MnO-containing 4 - In the electrolyte solution of ions (the conductive electrolyte is 0.1mol / l NaCl solution), the salt bridge is saturated potassium chloride / agar, and the fixed value resistance is 82.3 ohms, then the surface current density of the anode is the same as that of MnO 4 - There is the following relationship between ion concentrations (as shown in Table 1)

[0016] Table 1 Surface current density of the anode and MnO in the cathode solution 4 - Relationship Between Ion Concentration

[0017] [Mn0 4 - ](mol / l)

Embodiment 2

[0018] Embodiment 2. tungsten sheet (25*15*0.1mm 3 ) soaked in Ca 2+ An alkaline solution with an ion concentration of 0.2mol / l (pH value is about 12.2), with the C block as the cathode, immersed in 0.1mol / l kMnO 4 In the solution, the salt bridge is saturated potassium chloride / agar, and the fixed value resistance is 82.3 ohms, then the surface current density of the anode (the average value between 0-200 seconds) can reach 21-26A / m 2 .

Embodiment 3

[0019] Example 3. Cu 2+ Effect of Ion Concentration on Reaction Rate

[0020] Tungsten sheet (25*15*0.1mm) pre-treated by metallographic sandpaper rough grinding, degreasing 3 ) immersed in saturated Ca(OH) 2 In solution, platinum sheet (2.0*2.0*0.1mm 3 left and right) dipped in a Cu-containing 2+ In the electrolyte solution of ions (the conductive electrolyte is 0.1mol / l NaCl solution), the salt bridge is saturated potassium chloride / agar, and the fixed value resistance is 82.3 ohms, then the surface current density of the anode is the same as that of Cu 2+ There is the following relationship between ion concentrations (as shown in Table 2).

[0021] Surface current density of table 2 anode and Cu in cathode solution 2+ Relationship Between Ion Concentration

[0022] [Cu 2+ ](mol / l)

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PUM

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Abstract

The invention discloses a method for regulating and controlling filming speed of scheelite film, belonging to the technical field of oxide film preparation. In the invention, the original system is adopted, oxidant is added at cathode or in cathode electrolyte, and type and concentration of oxidant is changed to control the reaction speed of anode tungsten or molybdenum to form tungstate or molybdate film layer. The method is carried out at room temperature without heat treatment, thus avoiding flaws caused in heat treatment crystallization process, quickly synthesizing tungstate and molybdate polycrystal films with good luminous performance. The invention dispenses with heating procedure and external electrochemical equipment, and has the characteristic of zero energy consumption.

Description

technical field [0001] The invention relates to a method for regulating and controlling the speed of tungstate and molybdate polycrystalline films with a scheelite structure electrochemically deposited by a primary battery, belonging to the technical field of film preparation, in particular to a method for regulating and controlling the film-forming speed of a scheelite film . Background technique [0002] Tungstates and molybdates with scheelite structure are an important class of optoelectronic functional materials, which have important applications in laser, display, detection and other fields. [0003] Electrochemical preparation of tungstate and molybdate polycrystalline films with scheelite structure can be divided into two routes: electrolytic type (such as constant current, constant potential, etc.) and primary battery type. Compared with the electrolytic electrochemical technology, the galvanic battery route is an emerging electrochemical film formation technology,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D9/08
Inventor 陈连平高远红
Owner 赣州市海龙钨钼有限公司