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Method for forming lightly doped drain

A lightly doped drain and gate structure technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as insufficient impurity activation, achieve ideal distribution of dopant ions, improve electrical performance, reduce The effect of tunneling

Active Publication Date: 2012-08-22
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The invention provides a method for forming a lightly doped drain, so as to improve the phenomenon of insufficient impurity activation that is prone to occur when the existing lightly doped drain has a low thermal budget

Method used

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  • Method for forming lightly doped drain
  • Method for forming lightly doped drain
  • Method for forming lightly doped drain

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Embodiment Construction

[0037] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] The processing method of the present invention can be widely used in various fields, and can utilize many suitable materials to make, and the following is to illustrate by specific embodiment, certainly the present invention is not limited to this specific embodiment, in this field Common replacements known to those of ordinary skill undoubtedly fall within the protection scope of the present invention.

[0039] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, which should not be u...

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Abstract

The invention discloses a method for forming a lightly doped drain, which comprises the following steps: providing a substrate on the surface of which at least one grid structure is formed; using the grid structure as a mask and performing a de-crystallization treatment on the substrate to form a amorphous region; performing a phosphorus implantation treatment on the amorphous region; performing a co-implantation treatment on the de-crystallization region; and performing a quick thermal annealing treatment to form lightly doped drains on both sides of the grid structure. The thermal budget ofan apparatus is lowered, a small junction depth is maintained and excellent electrical performance of the apparatus is obtained. The method is particularly beneficial for the manufacture of small-size apparatuses.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a lightly doped drain. Background technique [0002] The process of manufacturing semiconductor integrated circuit chips uses batch processing technology to form a large number of various types of complex devices on the same silicon substrate and connect them to each other to have complete electronic functions. With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, and the size of components is getting smaller and smaller. The various effects caused by the high density and small size of devices have an increasing impact on the results of semiconductor process manufacturing. protrude. [0003] Take the formation of a lightly doped drain (LDD, Light-Doped Drain) as an example. figure 1 A device cross-sectional schematic diagram for illustrating an existing method for form...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335H01L21/336H01L21/265H01L21/324
Inventor 刘兵武居建华
Owner SEMICON MFG INT (SHANGHAI) CORP
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