Method for manufacturing semiconductor devices

Abstract

The invention discloses a method for manufacturing semiconductor devices, and a semiconductor substrate, a gate oxide layer deposited on the substrate and a polysilicon layer positioned on the gate oxide layer are comprised. The method also comprises the following steps of: taking patterned light resistance glue as a mask film for etching the polysilicon layer; taking the patterned light resistance glue and etched polysilicon layer as shielding, and pouring deep irons into the substrate to form a source electrode and a drain electrode; carrying out secondary patterning on the patterned light resistance glue for forming the gate; taking the secondarily patterned light resistance glue as the mask to etch the polysilicon layer for the second time for forming the gate; taking the gate as the shielding, and pouring the light irons into the substrate; and depositing a silicon nitride layer with stress on the gate and the surface of the substrate. A side wall layer does not need to be set byadopting the method, the stress greater than the prior art is obtained, and carrier mobility in channels can flexibly and effectively adjusted.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device with a stressed silicon nitride layer. Background technique [0002] Currently, in the manufacture of semiconductor devices, silicon nitride can be used to induce stress in the transistor channel, thereby adjusting the carrier mobility in the channel. The induced stress depends on the stress state of the silicon nitride itself and the relative position of the associated channel part. The greater the stress, the greater the mobility of carriers in the channel. In the prior art, the semiconductor device process for forming a stressed silicon nitride layer is as follows Figures 1A to 1E shown in Figure 1A Among them, a gate 3 is formed on a semiconductor substrate 1 , and a gate oxide layer 2 is formed between the substrate 1 and the gate 3 . Next as Figure 1B As shown, the first sidewall layer 4 is formed o...

AI Technical Summary

Problems solved by technology

However, in the prior art, when depositing a stressed silicon nitride layer, due to the existence of the first sidewall layer, the stress of the corresponding channel portion under the first sidewall layer is passed through the first sidewall layer. Transmitted by the wall layer, so no more stress can be introduced to more flexibly and effectively adjust the carrier mobility in the channel

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