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Display device and its manufacturing method

A technology for a display device and a manufacturing method, which is applied to static indicators, instruments, nonlinear optics, etc., can solve problems such as poor display, leakage short circuit, and poor open circuit, and achieve the effects of reducing poor display and preventing voltage drop

Inactive Publication Date: 2010-07-21
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the pattern of wiring etc. on the substrate is also high-definition along with the high-definition display, it is difficult to completely prevent the occurrence of display defects (including display defects) caused by disconnection and short-circuiting of the wiring etc.
[0003] For example, TFT open failures in which TFTs are always off, and leakage (short circuit) in the storage capacitor unit may occur.
In addition, there are cases where TFT characteristics are poor due to poor carrier doping in TFTs.
[0004] Due to these defects, display defects often appear as bright spots.

Method used

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  • Display device and its manufacturing method
  • Display device and its manufacturing method

Examples

Experimental program
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Embodiment approach 1

[0081] figure 1 and figure 2 Embodiment 1 of this invention is shown. In Embodiment 1, a liquid crystal display device will be described as an example of a display device. figure 1 It is a circuit diagram showing the configuration of the liquid crystal display device 1 in the first embodiment. figure 2 It is an enlarged plan view showing a part of the correction pixel in the first embodiment.

[0082] The liquid crystal display device 1 is an active matrix type liquid crystal display device, and it includes: a TFT substrate 10, an opposite substrate (not shown) arranged opposite to the TFT substrate 10, and a substrate disposed between the above-mentioned opposite substrate and the above-mentioned TFT substrate 10. Liquid crystal layer 5. In addition, the liquid crystal display device 1 is a normally white liquid crystal display device that performs white display with no voltage applied to the liquid crystal layer 5 and black display with a voltage applied to the liquid ...

Embodiment approach 2

[0117] image 3 with Figure 4 Embodiment 2 of this invention is shown. image 3 It is an enlarged plan view showing two pixels in the second embodiment. Figure 4 is a plan view schematically showing a pixel arrangement. In addition, in each of the following embodiments, for the figure 1 with figure 2 The same parts are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0118] In the first embodiment described above, the short-circuit portion 35 is formed in the correction pixel 12a, but in the second embodiment, the short-circuit portion 35 is formed in a pixel 12 different from the correction pixel 12a.

[0119] That is, the drain portion 19 of the correction pixel 12a is short-circuited with the gate line 13 connected to the TFT 16 of the pixel 12 adjacent to the correction pixel 12a. The pixel 12 in which the short-circuit portion 35 is formed is adjacent to the correction pixel 12 a via the CS wiring 11 . That is, the gate...

Embodiment approach 3

[0131] Figure 5 Embodiment 3 of this invention is shown. Figure 5 It is an enlarged plan view showing a part of correction pixels in Embodiment 3. FIG.

[0132] In the first embodiment described above, the short-circuit region 33 is formed on the gate wiring 13 , whereas in the third embodiment, the short-circuit region 33 is formed on the gate electrode 17 of the TFT 16 .

[0133]That is, if Figure 5 As shown, in the pixel 12 , the short-circuit region 33 is extended from the front end of the gate electrode 17 of the TFT 16 . The width of the short-circuit region 33 in the longitudinal direction of the gate wiring 13 is larger than that of the gate electrode 17 . On the other hand, part of the drain electrode 25 is extended so as to overlap the short-circuit region 33 and faces the short-circuit region 33 . Thus, in the correction pixel 12a, the short-circuit portion 35 is formed in the short-circuit region 33 described above.

[0134] According to such a configuratio...

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Abstract

A method of manufacturing a display device includes a correction process wherein brightness point defect pixels are corrected by displaying them in black. In the correction process, the drains of TFTs in such brightness point defect pixels are short-circuited to a gate interconnection, and a semiconductor layer portion in each TFT is cut so as to electrically isolate a source interconnection and the gate interconnection in each brightness point defect pixel.

Description

technical field [0001] The present invention relates to a display device and a manufacturing method thereof, in particular to correction of pixel defects. Background technique [0002] In recent years, there has been an increasing demand for improvement in display quality in active matrix display devices having a plurality of switching elements such as TFTs (Thin Film Transistors). However, since the pattern of wirings and the like on the substrate is also refined with higher definition of the display, it is difficult to completely prevent the occurrence of display defects (including display defects) caused by disconnection and short circuit of the wirings and the like. [0003] For example, TFT open failures in which the TFTs are always off, and leakage (short circuit) in the storage capacitor unit may occur. In addition, poor TFT characteristics may occur due to poor carrier doping in the TFT. [0004] Due to these defects, a display defect in which the display often bec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1368
CPCG02F1/136259G09G2330/10G09G3/3648
Inventor 吉田裕志中岛睦
Owner SHARP KK
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