Light-emitting diode chip and manufacturing method thereof

Abstract

The invention discloses a light-emitting diode chip and a manufacturing method thereof, the chip comprises an N-type semiconductor layer, an active layer positioned on the N-type semiconductor layer and a P-type semiconductor layer positioned on the active layer; when the light-emitting diode chip is manufactured, the downward etching is carried out from the P-type semiconductor layer, the side wall is formed, the N-type semiconductor layer is exposed, an N electrode is arranged on the N-type semiconductor layer, a transparent conductive layer is arranged on the P-type semiconductor layer, and a P electrode is arranged on the transparent conductive layer; insulating films are arranged on the side wall, on the periphery of the N electrode and below the P electrode; and the insulating film below the P electrode is positioned between the transparent conductive layer and the P-type semiconductor layer. The technical scheme can effective solve the problems of electric leakage of the chip, drop-off of the electrodes and the like.

Description

technical field [0001] The invention relates to a light-emitting diode chip and a manufacturing method thereof, in particular to a light-emitting diode chip capable of reducing electric leakage and preventing electrode shedding and a manufacturing method thereof. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. [0003] A light emitting diode generally has a structure in which an N-type nitride semiconductor layer, an active layer, and a P-type nitride semiconductor layer are sequentially stacked on a substrate such as sapphire. In addition, a P electrode is arranged on the P-type...

AI Technical Summary

Problems solved by technology

In this regard, ICP dry etching technology and ITO wet etching technology are commonly used in the industry, but when preparing electrodes, only the surface of the chip is acted on, and the sidewall of the chip is not protected afterwards, which leads to the damage of the active layer on the sidewall. The quantum well part will be exposed, and at the same time, the N-type nitride semiconductor layer, active layer, and P-type nitride semiconductor layer on the sidewall will be damaged to varying degrees due to plasma etching, and in the subsequent ITO wet etching, ITO will not be etched clean, and both consequences will lead to leakage. In addition, LED chips are prone to electrode drop phenomenon during application. Usually, due to the current accumulation near the side wall of the chip, the current in some areas is too large and the temperature is too high. Eventually, causing the electrodes to fall off

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