Mounting table structure, and treating apparatus

Abstract

Provided is a mounting table structure, which can prevent a high thermal stress from occurring in a mounting table thereby to prevent the mounting table itself from breaking and which can suppress the feed of a corrosion-preventing purge gas. The mounting table structure (54) is disposed in a treating container (22) of a treating apparatus (20), for mounting a treating object (W). The mounting table structure (54) comprises a mounting table (58) having heating means (64) and made of a dielectric material, and a cylindrical post (56) made of a dielectric material and extending upward from the bottom side of the treating container, for supporting the mounting table (58) removably. To the lower face of the mounting table (58), there are jointed cylindrical protecting tubes (60), which have a diameter smaller than that of the post and which are made of a dielectric material. Into the protecting tubes (60), there are inserted functional rod members (62), which reach the mounting table (58) at their upper ends.

Description

technical field [0001] The present invention relates to a processing device and a mounting table structure of a target object such as a semiconductor wafer. Background technique [0002] In general, when manufacturing semiconductor integrated circuits, various monolithic processes such as film formation, etching, heat treatment, modification, and crystallization are repeatedly performed on a target object such as a semiconductor wafer to form a desired integrated circuit. When performing various treatments as described above, the necessary processing gas is introduced into the processing container corresponding to the type of the processing. For example, in the case of film-forming processing, film-forming gas or halogen gas is introduced. In the case of the introduction of ozone gas, etc., in the case of crystallization treatment, the introduction of N 2 Inert gas such as gas or O 2 Gas etc. [0003] For example, if a monolithic processing device that heats semiconductor...

AI Technical Summary

Problems solved by technology

As a result, the generated thermal stress causes damage to the mounting table 2

[0014] In particular, although it differs depending on the type of processing, the temperature of the mounting table 2 also reaches 700°C or higher, so the above-mentioned temperature difference becomes considerably large, and a large thermal stress is generated accordingly.

In addition, there is another problem that the above-mentioned thermal stress causes damage due to repeated heating and cooling of the mounting table.

[0017] However, in this case, the purge gas supplied into the column 4 may leak to the processing space side in the processing container through the small gap, and as a result, not only processing under high vacuum cannot be performed, but also due to A large amount of purge gas is consumed, so there is also a problem of high operating costs

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