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Micro inertial sensor with transversely movable electrodes embedded and manufacturing method thereof

A technology of moving electrodes and lateral movement, which is applied to the components of the TV system, the photoplate process of the pattern surface, piezoelectric/electrostrictive/magnetostrictive devices, etc., and can solve the problem of increasing the mass of the sensor vibrator and the distance between the capacitor plates Reduce and other problems, to achieve the effect of mechanical noise improvement

Inactive Publication Date: 2010-08-04
HANGZHOU DIANZI UNIV
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AI Technical Summary

Problems solved by technology

For comb-shaped capacitive sensors processed by bulk silicon technology such as deep reactive particle etching (Deep RIE), the aspect ratio of the plate capacitance is generally less than 27:1, which limits the increase in the mass of the sensor vibrator and the Reduction of capacitor plate spacing

Method used

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  • Micro inertial sensor with transversely movable electrodes embedded and manufacturing method thereof
  • Micro inertial sensor with transversely movable electrodes embedded and manufacturing method thereof
  • Micro inertial sensor with transversely movable electrodes embedded and manufacturing method thereof

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the present invention is by no means limited to the described embodiments.

[0035] Embodiments of the present invention relate to a capacitive micro-inertial sensor, referring to Fig. 1(a), Fig. 1(b), Fig. 2(a), Fig. 2(b), image 3 , Figure 4 and Figure 5 On the first substrate 1, two sets of interdigitated fixed counter electrodes for detection are formed, corresponding to the connection coupling electrodes 2 between the fixed mass blocks, and the connection lines between the coupling electrodes 2 and the extraction electrodes 4, and the detection cross combs The tooth-shaped fixed counter electrode is composed of comb-teeth electrodes 3 and lead-out electrodes that cross relative to each other in the transverse direction; the sensor anchor point 12 fixed on the first substrate 1 is formed on the second substrate, and the sensor anchor point 12 of t...

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Abstract

The invention provides a micro inertial sensor with transversely movable electrodes embedded and a manufacturing method thereof. The existing sensors have big noise, poor stability and small range and bandwidth. Sensor mass blocks capable of transverse moving are symmetrically arranged at the two sides of a sensor gate mass block in the sensor. Sensor anchor points are arranged at the two ends of the sensor gate mass block. Gate electrodes are arranged in the sensor mass blocks. Silicon strip groups are arranged at one side of each sensor mass block capable of transverse moving and are arranged corresponding to solid mass blocks. The manufacturing method is characterized by firstly forming fixed counter electrodes on a first substrate, secondly forming an electric insulation layer on the upper surface of a second substrate and forming a floating zone on the lower surface of the second substrate, thirdly bonding the two substrates and finally etching the second substrate to form the sensor. The micro inertial sensor has novel structure, high resolution and sensitivity and simple manufacturing process and is beneficial to lowering the cost and improving the yield.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical technology, and relates to a micro-inertial sensor, in particular to a high-resolution micro-inertial sensor in which the relative motion of a variable capacitance plate is represented by synovial film damping, and a transverse movable electrode is embedded on a vibrator. its production method. Background technique [0002] In recent ten years, accelerometers made with micromechanical technology have been developed rapidly. Its main acceleration detection technologies include piezoresistive detection, piezoelectric detection, thermal detection, resonance detection, electromagnetic detection, light detection, tunnel current detection and capacitance detection. In addition, there are accelerometers based on other detection technologies, such as optical accelerometers, electromagnetic accelerometers, and capacitive accelerometers. The development of optical accelerometers is mainly to combine...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00B81C3/00G01P15/125
Inventor 董林玺颜海霞
Owner HANGZHOU DIANZI UNIV
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