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Magnetic recording medium and magnetic recording/reproducing device

A magnetic recording medium and magnetic recording layer technology, applied in magnetic recording, data recording, recording information storage, etc., can solve problems such as inability to orientate, Ni-W alloy cannot maintain a face-centered cubic structure, and achieve high recording density characteristics Effect

Inactive Publication Date: 2010-08-04
SHOWA DENKO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to further improve the recording density in the future, further refinement of the particle size is being sought, but if the addition amount of W is continuously increased, it will become outside the range of the solid solution region when W>15 atomic %, and Ni-W The alloy cannot maintain the face-centered cubic structure, and the Ru in the intermediate layer and / or the magnetic recording layer cannot be oriented

Method used

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  • Magnetic recording medium and magnetic recording/reproducing device
  • Magnetic recording medium and magnetic recording/reproducing device
  • Magnetic recording medium and magnetic recording/reproducing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] (Example 1, Comparative Example 1)

[0060] The vacuum chamber in which the HD glass substrate is placed is pre-evacuated to 1.0×10 -5 Below Pa.

[0061] Next, a 50 nm-thick soft magnetic backing layer Co10Ta5Zr was formed on the substrate by sputtering in an Ar atmosphere at a pressure of 0.6 Pa.

[0062] Next, Cu10Cr, Cu20Cr, Cu10V, Cu20V, Cu10W, Cu20W, Ag10V, Ag20V, Au10W, Au20W (atomic) films were formed with a thickness of 5 nm in an Ar atmosphere at a pressure of 0.6 Pa as seed layers, and further 8 nm films were formed. A thick Ru film was used as the first intermediate layer (Examples 1-1 to 10). Ru films each having a thickness of 12 nm were formed as the second intermediate layer in an Ar atmosphere having a gas pressure of 5 Pa. As a comparative example, Cu, Cu30Cr, Cu30V, Cu30W, Ag, Ag30V, Au, Au30W films were formed as seed layers with a thickness of 5 nm in an Ar atmosphere at a gas pressure of 0.6 Pa (Comparative Examples 1-1 to 8). Furthermore, the f...

Embodiment 2

[0067] (Example 2, Comparative Example 2)

[0068] In the same manner as in Example 1, a soft magnetic layer was formed on a glass substrate. Cu10V, Cu20V, Cu10W, and Cu20W films were formed in an Ar atmosphere having a gas pressure of 0.6 Pa as seed layers with a thickness of 8 nm (Examples 2-1 to 4). In addition, as a comparative example, Ni, Ni10V, Ni20V, Ni30V, Ni10W, Ni20W, Ni30W films were formed as seed layers with a thickness of 8 nm in an Ar atmosphere having a gas pressure of 0.6 Pa (Comparative Examples 2-1 to 7).

[0069] Next, a 10 nm thick Ru film was formed in an Ar atmosphere with a pressure of 0.6 Pa as the first intermediate layer, and a 10 nm thick Ru-2TiO 2 (mol%) as the second intermediate layer. Furthermore, the formation of 91 (Co19Cr19Pt)-9 (SiO 2 ) film as a magnetic recording layer and a carbon film as a protective layer to make a perpendicular magnetic recording medium.

[0070] For Examples and Comparative Examples, the high signal-to-noise rati...

Embodiment 3

[0073] A soft magnetic layer was formed on a glass substrate in the same manner as in Example 1. Cu10Nb and Cu10Mo films with a film thickness of 8 nm were formed as seed layers in an Ar atmosphere at a gas pressure of 0.6 Pa (Examples 3-1 and 3-2). In addition, as Comparative Example 2, Cu10Ni, Cu10Pt, Cu10Mn, and Cu10Mg films each having a film thickness of 8 nm were formed as seed layers in an Ar atmosphere at a gas pressure of 0.6 Pa (Comparative Examples 3-1 to 4).

[0074] Next, in the same manner as in Example 2, a 10 nm thick Ru film was formed in an Ar atmosphere with a gas pressure of 0.6 Pa as the first intermediate layer, and a 10 nm thick Ru-2TiO film was formed in an Ar atmosphere with a gas pressure of 10 Pa. 2 (mol%) film as the second intermediate layer. Furthermore, the formation of 91 (Co19Cr19Pt)-9 (SiO 2 ) film as a magnetic recording layer and a C film as a protective layer to make a perpendicular magnetic recording medium.

[0075] For Examples and Co...

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Abstract

This invention provides a vertical magnetic recording medium comprising a nonmagnetic substrate, and at least a backing layer, an alignment control layer, a magnetic recording layer, and a protective layer provided on the nonmagnetic substrate. The vertical magnetic recording medium is characterized in that the alignment control layer has a multilayer structure of two or more layers and comprises a seed layer and an intermediate layer as viewed from the substrate side, and the seed layer is formed of a material containing 5 atomic% to 25 atomic% of an element of which the solid solution region for an element having a face-centered cubic structure in a phase diagram is not more than 1 atomic%. There is also provided a magnetic recording / reproducing device comprising the magnetic recording medium and a magnetic head for recording information on the magnetic recording medium and reproducing information from the magnetic recording medium.

Description

technical field [0001] The present invention relates to a magnetic recording medium and a magnetic recording and reproducing device using the magnetic recording medium. Background technique [0002] In recent years, the application range of magnetic recording devices such as magnetic disk devices, flexible magnetic disk devices, and magnetic tape devices has been significantly increased. While their importance has increased, the recording density of magnetic recording media used in these devices has been continuously improved. improve. Especially since the introduction of MR head and PRML technology, the increase in areal recording density has become more intense. In recent years, GMR head and TuMR head have also been introduced, which continue to increase at a rate of 30-40% per year. [0003] Thus, magnetic recording media are required to achieve higher recording density in the future, and for this purpose, higher coercive force, higher signal-to-noise ratio (SNR), and hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/738G11B5/65
CPCG11B5/732G11B5/65G11B5/7325G11B5/7379G11B5/737G11B5/658
Inventor 佐々木有三
Owner SHOWA DENKO KK
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