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Solid state imaging device

A technology of solid-state imaging devices and pixel units, applied in radiation control devices, image communications, televisions, etc., can solve problems such as inability to manufacture solid-state imaging devices, and achieve the effect of avoiding impact

Active Publication Date: 2012-04-25
HAMAMATSU PHOTONICS KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, sometimes one solid-state imaging device cannot be manufactured from one semiconductor wafer

Method used

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Embodiment Construction

[0055] Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings. Here, in the description of the drawings, the same reference numerals are attached to the same elements, and overlapping descriptions are omitted.

[0056] figure 1 It is a schematic configuration diagram of the solid-state imaging device 1 according to the present embodiment. The solid-state imaging device 1 according to the present embodiment includes a light receiving unit 10 , a signal reading unit 20 , an initialization unit 30 , and a control unit 40 . In addition, when used as an X-ray flat panel, a scintillator panel (not shown) is laminated on the light receiving surface 10 of the solid-state imaging device 1 .

[0057] The light receiving unit 10 is two-dimensionally arranged with M×N pixel units P 1，1 ~P M，N , the pixel portion P 1，1 ~P M，N Arranged in M ​​rows and N columns. Pixel part P m，n Located at row m and column n. Her...

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Abstract

A solid state imaging device (1) includes: a reception unit having M x N pixel portions P1,1 to PM,N arranged in two-dimensional way of M rows and N columns; a signal read-out unit having integration circuits S1 to SN and holding circuits H1 to HN; and an initialization unit having initialization switches SWI,1 to SWI,N. A discharge switch SW2 of each integration circuit Sn is temporarily closed and opened by a discharge control signal Reset. After this, the read-out switch SW1 of the respective pixel portions Pm,n of the m-th row is closed for a first period by the m-th row selection controlsignal Vsel(m). During the first period, a hold control signal Hold shifts the input switch SW31 of each holding circuit Hn from the closed state to the open state. After this, an initialization control signal Init closes the respective initialization switches SWI,N for a second period.

Description

technical field [0001] The present invention relates to a solid-state imaging device. Background technique [0002] As a solid-state imaging device, a device using CMOS (Complementary Metal Oxide Semiconductor) technology is well known, and a passive pixel sensor (PPS: Passive Pixel Sensor) system is particularly known (see Patent Documents 1 and 2). ). The solid-state imaging device of the PPS method is: PPS-type pixel sections including photodiodes that generate charges corresponding to the intensity of incident light are two-dimensionally arranged in M ​​rows and N columns, and each pixel section generates a charge corresponding to the incident light intensity. The charge in the photodiode is stored in the capacitive element in the integration circuit, and the device outputs a voltage value corresponding to the stored charge. [0003] Usually, the output terminals of the M pixel units in each column are connected to the input terminals of the integration circuit provide...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/367H04N5/359G01J1/44H04N25/00H01L27/146
CPCH04N5/378H04N5/367H04N5/3591H04N5/374H04N5/359G01J1/44H04N5/32H04N5/3742H04N25/621H04N25/68H04N25/767H04N25/76H04N25/78H04N25/62H04N25/75
Inventor 藤田一树久嶋龙次森治通本田真彦
Owner HAMAMATSU PHOTONICS KK