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Substrate for holding at least one component and method for producing same

A technology for substrates and components, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as DCB substrate fracture, and achieve the effect of simple cost

Inactive Publication Date: 2010-08-18
SEMIKRON ELECTRONICS GMBH & CO KG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This bending may lead to breakage of the DCB substrate in other processing chains

Method used

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  • Substrate for holding at least one component and method for producing same
  • Substrate for holding at least one component and method for producing same
  • Substrate for holding at least one component and method for producing same

Examples

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Embodiment Construction

[0027] exist figure 1 In this case, a connection layer 2 is provided on the substrate body 1 . The connection layer 2 connects the conductive layer 3 with the substrate body 1 . The conductive layer 3 is connected to the element 4, and the conductive layer 3 may be a conductor line structure. The component 4 can be a semiconductor component, in particular a power semiconductor. The element 4 is connected to the conductive layer 3 , for example by means of a conventional solder connection.

[0028] The connection layer 2 is electrically insulating, preferably made of polysiloxane, which is filled with fillers up to a filling degree of 60% by volume to 80% by volume. The filler is suitably SiC having an average particle size in the range of 2 to 10 μm. Such a connection layer 2 has an excellent thermal conductivity λ of greater than 20 W / mK.

[0029] The substrate body 1 is made of metal, preferably a copper alloy or an aluminum alloy. The substrate body 1 can be produced ...

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PUM

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Abstract

The invention relates to a substrate for holding at least one component and method for producing the same, the component (4) is specially a power semiconductor, the substrate has a substrate body (1) provided at the front and rear sides with an electrically conductive layer (3, 3a, 3b). For improving the thermal conductivity of the electrically conductive layer (3, 3a, 3b), an electrically insulated connection layer (2, 2a, 2b) is provided between the substrate body (1) and the electrically conductive layer (3, 3a, 3b), which has a duroplastic matrix formed from the pre-ceramic polymer. In the method for producing the substrate, the electrically conductive layer (3, 3a, 3b), in the presence of the pre-ceramic polymer, is connected with the substrate body (1), then the pre-ceramic polymer is transformed into the thermosetting form, thereby the electrically insulated connection layer (2, 2a, 2b) is formed for connecting the electrically conductive layer (3, 3a, 3b) and the substrate body (1).

Description

technical field [0001] The invention relates to a substrate according to the preamble of claim 1 . The invention also relates to a method of manufacturing a substrate. Background technique [0002] Substrates for receiving electrical or electronic components are generally known from the prior art. Such a substrate generally consists of a plate of electrically insulating material which is provided with an electrically conductive layer at least on the front side and / or on the opposite rear side. The plate can be made of electrically insulating plastic or ceramic, for example. In particular for the production of modules equipped with power semiconductors, direct copper-on-copper (DCB) substrates are used according to the prior art, for example. Here, plates made of aluminum oxide or aluminum nitride are used as electrical insulators. As a result, the conductor lines are applied from pure copper in a high-temperature melting and diffusion process. Such DCB substrates are di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/14H01L21/48
CPCH01L2924/0002H05K1/053H01L23/49894H05K2201/0209H05K2201/0175H01L23/3735H01L2224/32225
Inventor 克里斯蒂安·约布尔海科·布拉姆尔乌尔里希·赫尔曼托比亚斯·非
Owner SEMIKRON ELECTRONICS GMBH & CO KG
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