Integrated package structure for super power vertical chip

Abstract

The invention belongs to the technical field of semiconductor lighting devices, and in particular discloses an integrated package structure for a super power vertical chip. In the integrated package structure, a metal foil is used for connecting a negative electrode pad of the super power vertical chip and a base electrode, and a high current steady load and a high heat conducting property of the chip are achieved. A package base comprises a positive electrode conductive plate, a negative electrode conductive plate and an insulating heat conducting layer. Eutectic soldering is adopted between the negative electrode pad of the vertical chip and the metal foil, between the metal foil and the negative electrode conductive plate, and between the positive electrode of the chip and the positive electrode conductive plate. By replacing a gold wire or an aluminum wire connecting the negative electrode of the chip and the negative electrode of the package base with the metal foil, the invention solves the problem of difficulty in high current conduction between the LED chip and the package base, improves the heat dissipating performance of the package, achieves reliable high power density package, and can be used for super power LED ultraviolet, visible and infrared lighting systems.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lighting devices, and in particular relates to an integrated package structure of a super-high-power vertical chip. Background technique [0002] With the rapid development of LED chip preparation technology, the power of a single chip is increasing, which promotes the development of various high-power or high-power-density LED devices and lighting systems, and expands the application of LED in various general lighting and special lighting. The field and scope of application. Especially in the field of ultraviolet LED applications, the input power of a single chip with a wavelength above 365nm has increased from a few watts to tens of watts, and is developing towards a hundred watts. [0003] Vertical structure chips are an inevitable trend in the development of high-power chips. The P-type and N-type electrodes of the vertical structure LED chip are on both sides of the LED epitaxial laye...

AI Technical Summary

Problems solved by technology

However, this structure also uses gold wires as the electrical connection carrier between the chip electrodes and the substrate. When the chip current is high, there is also the problem of uneven shunting of the gold wires, which limits the further improvement of the packaging power density.

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