Lateral bipolar junction transistor and method for manufacturing the same

Abstract

The invention relates to a lateral bipolar junction transistor and a method for manufacturing the same. The lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.

Description

Lateral bipolar junction transistor and method of manufacturing the same technical field The present invention relates to semiconductor technology, and in particular to lateral bipolar junction transistors and methods for their manufacture. Background technique Those skilled in the art are well aware that bipolar junction transistors (Bipolar Junction Transistor, hereinafter referred to as BJT) or bipolar transistors (Bipolar Transistor) are used in conjunction with complementary metal oxide semiconductor (Complementary Metal-Oxide-Semiconductor, hereinafter referred to as CMOS) Compatible process formed. These bipolar transistors also relate to lateral bipolar junction transistors (Lateral Bipolar Junction Transistor, hereinafter referred to as LBJT) and have a high threshold frequency (threshold frequency, hereinafter referred to as Ft) and a high current gain β (beta). In the design of semiconductor integrated circuits (Integrated Circuits, hereinafter referred to as ...

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Problems solved by technology

However, perfecting the performance of both fabricated CMOS and bipolar devices at ever-shrinking sizes is quite challenging

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