Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device

Abstract

The invention discloses a basal plate retainer for an ECR (Equivalent Continuous Rating) plasma sputtering device, comprising an original basal plate (3), a fixed shaft (4) connected with the original basal plate (3), a supporting plate (5) and a fixed flange (2) for connecting a vacuum chamber which are sequentially and axially arranged on the fixed shaft (4), wherein a driving shaft (6) parallel to the fixed shaft (4) passes through the supporting plate (5) and the fixed flange (2), and the outer end part of the driving shaft (6) is provided with a rotating handle(7). The basal plate retainer is characterized in that the original basal plate (3) is provided with an expanded basal plate (8), a driven shaft (9) passes vertically through the expanded basal plate (8), the driven shaft (9) and the driving shaft (6) are respectively provided with a gear, and the gears are meshed mutually, the inner end parts of the driven shaft (9) and the driving shaft (6) are respectively fixed with an upper baffle plate (12) and a lower baffle plate (13); and the driven shaft (9) passes through the position of the expanded basal plate (8) and is near to the periphery of the expanded basal plate (8).

Description

technical field [0001] The present invention relates to an electron cyclotron resonance (ECR) plasma sputtering device, in particular to a substrate holder for an ECR plasma sputtering device capable of increasing the area of ​​a sputtering substrate. Background technique [0002] ECR plasma sputtering processing technology has been widely used in various thin film processes due to its excellent performance in micro-nano structure composite, material surface processing and modification, element doping, etc., which has attracted the attention and research of many scholars. . ECR plasma sputtering processing technology originated from electron cyclotron resonance technology in the research of controllable nuclear fusion. When the frequency of electron cyclotron motion is equal to the frequency of microwave propagating along the magnetic field, resonance occurs. Under the action of magnetic field, the radius of electron cyclotron motion gradually increases. Large, the energy ...

AI Technical Summary

Problems solved by technology

[0003] At present, in the field of thin film preparation by ECR plasma sputtering, it is generally hoped that the plasma can be uniformly filled in the entire vacuum chamber, and a thin film with the largest area can be deposited on the substrate holder; however, in the existing ECR plasma sputtering device, the substrate holder In this method, a single-axis control baffle is set in front of the substrate holder. The baffle occupies the cross-sectional area of ​​the vacuum chamber, thereby affecting the area of ​​the deposited film, which limits the size of the sample on the substrate holder.

Images